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Revisiting CdS-PbS Solar Cell Structure

Published online by Cambridge University Press:  01 February 2011

Harumi Moreno Garcia
Affiliation:
hamog@cie.unam.mx, Universidad Nacional Autonoma de Mexico, Centro de Investigacion en Energia, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico
O. Gómez-Daza
Affiliation:
ogd@cie.unam.mx, Universidad Nacional Autonoma de Mexico, Centro de Investigacion en Energia, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico
J. Campos
Affiliation:
jca@cie.unam.mx, Universidad Nacional Autonoma de Mexico, Centro de Investigacion en Energia, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico
M. T. S. Nair
Affiliation:
mtsn@cie.unam.mx, Universidad Nacional Autonoma de Mexico, Centro de Investigacion en Energia, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico
P. K. Nair
Affiliation:
pkn@cie.unam.mx, Universidad Nacional Autonoma de Mexico, Centro de Investigacion en Energia, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico, 5556229732, 5556229742
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Abstract

CdS and PbS are well known semiconductor materials. Starting in 1969 and into 1970's CdS-PbS cells were reported with open circuit voltage (Voc) up to 450 mV and short circuit current density (Jsc) < 1 mA/cm2. However, further reports are scarce. These two materials are also the most investigated by chemical deposition technique. In this work we revisit this type of photovoltaic junctions and present the photovoltaic behavior of distinct type of cell structures prepared by chemical deposition: glass/CdS/PbS/Ag, SnO2:F/CdS/PbS/Ag, and SnO2:F/CdS/(Bi2S3 or/and CdSe)/PbS/Ag. Depending on the cell type, Voc of > 500 mV or Jsc of > 3 mA/cm2 could be obtained under illumination of 1-3 kW/m2. This work opens up possibilities for developing simple solar cell structures by sequential chemical deposition of semiconductors.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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