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Retarded Growth of Sputtered HfO2 Films on Germanium

Published online by Cambridge University Press:  17 March 2011

Koji Kita ,
Masashi Sasagawa ,
Masahiro Toyama ,
Kentaro Kyuno  and
Akira Toriumi
Koji Kita
Affiliation:
Department of Materials Science, The University of Tokyo7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Masashi Sasagawa
Affiliation:
Department of Materials Science, The University of Tokyo7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Masahiro Toyama
Affiliation:
Department of Materials Science, The University of Tokyo7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Kentaro Kyuno
Affiliation:
Department of Materials Science, The University of Tokyo7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Akira Toriumi
Affiliation:
Department of Materials Science, The University of Tokyo7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Abstract

HfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B5.5.1/D5.5
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Chui, C. O., Kim, H., Chi, D., Triplett, B. B., McIntyre, P. C. and Saraswat, K.C., 2002 IEDM Tech. Digest, pp.437–439 (2002).Google Scholar
[2] Lee, B.H., Kang, L., Nieh, R., Qi, W.-J. and Lee, J.C., Appl. Phys. Lett. 76 (14) 1926 (1999).Google Scholar
[3] Shimizu, H., Sasagawa, M., Kita, K., Kyuno, K. and Toriumi, A., Ext. Abst. of Solid State Devices and Materials (Tokyo, 2003), pp.486–487 (2003).Google Scholar
[4] Boher, P., Evrard, P., Piel, J. P., Stehle, J. L., J. Non-Cryst. Solids, 303, 167 (2002)Google Scholar
[5] Chui, C. O., Ramanathan, S., Triplett, B. B., McIntyre, P. C. and Saraswat, K. C., IEEE Electron Dev. Lett. 23 (8) 473 (2002).Google Scholar
[6] Segda, B. G., Jacquet, M., Caapera, C., Baud, G., Besse, J. P., Nucl. Inst. Methods Phys. Res. B 170, 105 (2000).Google Scholar
[7] Shang, H., Okorn-Schimdt, H., Ott, J., Kozlowski, P., Steen, S., Jones, E. C., Wong, H. -S. P. and Hanesch, W., IEEE Electron Dev. Lett. 24 (4) 242 (2003).Google Scholar