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Resistless Etching of SiO2 by Two Color Excimer Lasers

Published online by Cambridge University Press:  25 February 2011

T. Obara  and
M. Murahara
T. Obara
Affiliation:
Graduate Student of Tokai Univ., Faculty of Eng
M. Murahara
Affiliation:
Faculty of Eng., Tokai Univ., 1117, Kitakaname, Hiratuka, Kanagawa 259-12, Japan
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Abstract

Resistless etching of thermal oxide silicon filmes were demonstrated by ArF & KrF excimer lasers, and CC12F2 gases. CC12F2 was decomposed by ArF excimer laser light, and CF2 radicals were produced. These radicals, which have absorption band nearby 250nm, were vary stable. Then the circuit pattarned KrF laser light was irradiated on the SiO2 in an atomsphere of CF2 radicals. As thse result, the etching pattern of 2 μ m width was performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 65
Copyright
Copyright © Materials Research Society 1992

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