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Resistive Electrical Switching of Cu+ and Ag+ based Metal-Organic Charge Transfer Complexes

Published online by Cambridge University Press:  01 February 2011

Robert Mueller ,
Joris Billen ,
Aaron Katzenmeyer ,
Ludovic Goux ,
Dirk J. Wouters ,
Jan Genoe  and
Paul Heremans
Robert Mueller
Affiliation:
robert.muller@imec.be, IMEC v.z.w., PT\SOLO\PME, Kapeldreef 75, Leuven, 3001, Belgium, 0032-16281908, 0032-16281097
Joris Billen
Affiliation:
j.billen@scarlet.be, IMEC v.z.w., PT\SOLO\PME, Kapeldreef 75, Leuven, 3001, Belgium
Aaron Katzenmeyer
Affiliation:
akatzenmeyer@gmail.com, IMEC v.z.w., PT\SOLO\PME, Kapeldreef 75, Leuven, 3001, Belgium
Ludovic Goux
Affiliation:
Ludovic.Goux@imec.be, IMEC v.z.w., PT\CMOSRD\MEMORY, Kapeldreef 75, Leuven, 3001, Belgium
Dirk J. Wouters
Affiliation:
Dirk.Wouters@imec.be, IMEC v.z.w., PT\CMOSRD\MEMORY, Kapeldreef 75, Leuven, 3001, Belgium
Jan Genoe
Affiliation:
Jan.Genoe@imec.be, IMEC v.z.w., PT\SOLO\PME, Kapeldreef 75, Leuven, 3001, Belgium
Paul Heremans
Affiliation:
Paul.Heremans@imec.be, IMEC v.z.w., PT\SOLO, Kapeldreef 75, Leuven, 3001, Belgium
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Abstract

Memory cells based on Cu+ and Ag+ metal-organic charge-transfer complexes, as for example CuTCNQ (where TCNQ denotes 7,7',8,8'-tetracyanoquinodimethane), are well known for their bistable resistive electrical switching since 1979. The switching mechanism however remained unclear for very long time. In this contribution we describe the different views (bulk vs. interfacial switching), give evidence for interfacial switching in the case of CuTCNQ, and present a model allowing explaining the bipolar resistive electrical switching by an interfacial effect, even for experiments considered until now as proof for bulk switching. The proposed switching mechanism is based on bridging of an ion-permeable layer (or gap) by conductive Cu channels, which are formed and dissolved by an electrochemical reaction implying monovalent Cu+ cations, originating from a solid ionic conductor (as for example CuTCNQ). The model was furthermore generalized to other memory systems consisting of a permeable layer and a solid ionic conductor, including also inorganic solid ionic conductors as for example Ag2S.

Keywords

memoryionic conductormetal-insulator transition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F06-04
Copyright
Copyright © Materials Research Society 2008

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