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Resist Poisoning-Free Advanced PECVD-Based Anti-Reflective Coating (ARC) for 90nm Technology and Beyond

Published online by Cambridge University Press:  01 February 2011

Sang H. Ahn ,
Sudha Rathi ,
Jean Liu ,
Heraldo Botelho ,
Wendy Yeh ,
Martin Seamons ,
Derek Witty  and
Hichem M'Saad
Sang H. Ahn
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
Sudha Rathi
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
Jean Liu
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
Heraldo Botelho
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
Wendy Yeh
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
Martin Seamons
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
Derek Witty
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
Hichem M'Saad
Affiliation:
Blanket Dielectric Films Di vision/DSM/ Applied Materials Inc., Santa Clara, C A 95054
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Abstract

A nitrogen-free (N-free) dielectric anti-reflective coating (DARC®) was cost-effectively developed in a plasma-enhanced chemical vapor deposition (PECVD) reactor to eliminate the 193nm resist poisoning interaction caused when N2O is used as a precursor [1]. Although it was found that even a N-free ARC could poison sensitive 193nm resists with –OH radicals [2], which either exist inherently in the ARC or result from H2O absorption by the ARC surface, the current investigation has revealed that it was possible to minimize resist poisoning. Our investigation showed that compressive film stress directly correlates to H2O resistance. Therefore, it was possible to greatly improve the ARC resistance to H2O absorption by creating and maintaining a process regime that makes the ARC film dense. The dense ARC film demonstrated promising lithography performance with minimal resist poisoning as well as excellent shelf life and O2-ashing resistance. This paper explores the N-free DARC material, its development, lithographic integration results and implementation in a production environment to eliminate 193nm resist poisoning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 782: Symposium A – Micro- and Nanosystems , 2003 , A5.91
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Ahn, Sang H., Fung, Miguel, Jung, Keebum, Zhu, Lei, Bencher, Chris, Kim, B. H., M'Saad, Hichem, Proceedings of 2002 Materials Research Society Fall Meetings vol.745 Google Scholar
[2] Kinkead, D. A. et al., Proceedings of the SPIE, the International Society for Optical Engineering. Vol.4344; 2001; p. 739–52Google Scholar
[3] Singer, , P Semiconductor-International. Vol.22, no. 3; March 1999; p. 55–6, 58,60Google Scholar
[4] Lee, G.Y., Lu-Z, G., Dobuzinsky, D.M., Ning-X, J., Costrini, G., Proceedings of the IEEE 1998 International Interconnect Technology Conference. IEEE, New York, NY, USA; 1998; 304 pp. p. 87–9Google Scholar