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Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors

Published online by Cambridge University Press:  10 February 2011

B. Wachtendorf ,
R. Beccard ,
D. Schmitz ,
H. Jürgensen ,
O. Schön ,
M. Heuken  and
E. Woelk
B. Wachtendorf
Affiliation:
AIXTRON GmbH, Kackertstr. 15–17, D-5'2072 Aachen, Germany
R. Beccard
Affiliation:
AIXTRON GmbH, Kackertstr. 15–17, D-5'2072 Aachen, Germany
D. Schmitz
Affiliation:
AIXTRON GmbH, Kackertstr. 15–17, D-5'2072 Aachen, Germany
H. Jürgensen
Affiliation:
AIXTRON GmbH, Kackertstr. 15–17, D-5'2072 Aachen, Germany
O. Schön
Affiliation:
Institut für Halbleitertechniki, RWTHAachen,, Sommerfeldstr. 24, D-5 207 4 Aachen, Germany
M. Heuken
Affiliation:
Institut für Halbleitertechniki, RWTHAachen,, Sommerfeldstr. 24, D-5 207 4 Aachen, Germany
E. Woelk
Affiliation:
AIXTRON Inc., 1569 Barclay Blvd., Buffalo Grove, IL 60089, U.S.A.
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Abstract

In this paper we present a class of MOCVD reactors with loading capacities up to seven 2″ wafers, designed for the mass production of LED structures.

Our processes yield device quality GaN with excellent PL uniformities better than 1 nm across a 2″ wafer and thickness uniformities typically better than 2%.

We also present full 2″ wafer mapping data, High Resolution Photoluminescence Wafer Scanning and sheet resistivity mapping, revealing the excellent composition uniformity of the nitride compounds InGaN and AlGaN. As well we will show sheet resistivity uniformity for Si-doped GaN and Mg-doped GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 7
Copyright
Copyright © Materials Research Society 1997

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