Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-24T16:17:56.869Z Has data issue: false hasContentIssue false
  • English
  • Français

The Reliability of Measurements on Electron Energy Distribution Function in Silane rf Glow Discharges

Published online by Cambridge University Press:  01 February 2011

Kuixun Lin ,
Xuanying Lin ,
Linfei Chi ,
Chuying Yu ,
Yunpeng Yu  and
Shi Liu
Kuixun Lin
Affiliation:
Department of Physics, Shantou University, Shantou 515063, China
Xuanying Lin
Affiliation:
Department of Physics, Shantou University, Shantou 515063, China
Linfei Chi
Affiliation:
Department of Physics, Shantou University, Shantou 515063, China
Chuying Yu
Affiliation:
Department of Physics, Shantou University, Shantou 515063, China
Yunpeng Yu
Affiliation:
Department of Physics, Shantou University, Shantou 515063, China
Shi Liu
Affiliation:
Department of Physics, Shantou University, Shantou 515063, China
Get access

Abstract

Electron energy distribution function (EEDF) is directly proportional to the second derivative of the probe I-V characteristics. Because of an amplifying effect of unavoidable noises in the experimental probe I-V curves on the derivation process, the experimental I-V curves should be smoothed before performing the numerical derivation. This article investigates the effect of adjustable factors used in the smoothing process on the deduced second derivative of the I-V curves, and an optimum group of the adjustable factors is selected to make the rms deviation of the smoothed I-V curves from the measured ones less than 1 %. A simple differentiation circuit is designed and used to measure the EEDF parameter straightforwardly. It is the first time, so far as we know, to measure the EEDF parameters simultaneously by means of both numerical and circuit derivative methods under the same discharge conditions and on the same discharge equipment. The deviation between two groups of mean electron energy (E) and electron density (ne) obtained by the above different methods is within about 7 %. This apparently improves the reliability of the measurements on the EEDF parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A6.1
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Surendra, M., Graves, D. B. and Morey, I. J., Appl. Phys. Lett. 56, 1022 (1990).Google Scholar
2. Wang, Z. D., Allan, J.L. and Ronald, H.C., IEEE Trans. Plasma Sci. 26, 59 (1998).Google Scholar
3. Chi, L. F., Lin, K. X., Lin, X. Y., Vacuum, 6, 23 (1999).Google Scholar
4. Yao, R. H., Chi, L. F., Lin, X. Y., Shi, W. Z., Lin, K. X., Acta Phys. Sin. 49, 922 (2000).Google Scholar
5. Chi, L. F., Lin, K. X., Yao, R. H., Lin, X. Y., Acta Phys. Sin. 50, 1313 (2001).Google Scholar
6. Druyvesteyn, M. J., Z. Phys. 64, 781 (1930).Google Scholar
7. Lin, Q. X., Lin, X. Y., Yu, Y.P., Wang, H. and Chen, J.Y., J. Appl. Phys. 74 (8), 4889 (1993).Google Scholar
8. Lin, Q. X., Lin, X. Y., Yu, Y. P., Wang, H., Hu, S. M., J. Funct. materials, 27(5), 392(1996).Google Scholar
9. Palop, J. I. F., Ballestros, J. C. V. and Hemandz, M. A., Rev. Sci. Instrum. 64(9), 4626 (1995).Google Scholar
10. Hayden, H. C., Comput. Phys. 1, 74 (1987).Google Scholar
11. Godyak, V. A., 1990 in Plasma Surface Interactions and Processing of Materials. p95.Google Scholar