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Relationship Between Structure and Electromigration Characteristics of Pure Aluminum Films

Published online by Cambridge University Press:  10 February 2011

David P. Field ,
Oleg V. Kononenko  and
Victor N. Matveev
David P. Field
Affiliation:
TexSEM Laboratories, 226W 2230N, Provo, UT, 84604 USA
Oleg V. Kononenko
Affiliation:
TexSEM Laboratories, 226W 2230N, Provo, UT, 84604 USA
Victor N. Matveev
Affiliation:
Inst. of Microelectronics Tech., Chernogolovka 142432, Moscow District, RUSSIA
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Abstract

Aluminum films were deposited from a high purity aluminum source by the self-ion assisted technique onto oxidized silicon wafers with TiN sub-layers. The ions were accelerated toward the substrate by potentials of 0, 3 and 6 kV. The films were patterned into strips 670 μm long and 8 μm wide using photo-lithographic procedures and wet etching. Average drift velocities were measured in the films tested under electromigration conditions. Electromigration activation energy was obtained for the films. It was found that electromigration activation energy increased with the acceleration potential. The strength of the (111) fiber texture, however, decreased with the acceleration potential. Therefore, the weaker textures resulted in higher electromigration activation energies. These results can be explained in terms of grain boundary structure, which controls electromigration behavior. By using orientation imaging microscopy to characterize the structures, it was shown that the weaker textured specimens contained a high fraction of low angle and low diffusivity grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 369
Copyright
Copyright © Materials Research Society 1997

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