Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-09-26T04:45:07.067Z Has data issue: false hasContentIssue false
  • English
  • Français

Relationship Between Hydrogen-Related Metastable Defect And EL2-Level In GaAs Crystals

Published online by Cambridge University Press:  15 February 2011

Tatsuyuki Shinagawa  and
Tsugunori Okumura
Tatsuyuki Shinagawa
Affiliation:
Dept. of Electr. & Inform. Eng., Tokyo Metropolitan University 1.1, Minami-ohsawa, Hachiohji, Tokyo 192-03, Japan
Tsugunori Okumura
Affiliation:
Dept. of Electr. & Inform. Eng., Tokyo Metropolitan University 1.1, Minami-ohsawa, Hachiohji, Tokyo 192-03, Japan
Get access

Abstract

The relationship between the hydrogen-related metastable defect (M3/M4) and the EL2 level in n-GaAs crystals has been investigated. We found with various kinds of GaAs crystals that the hydrogen-related metastable couple (M3/M4), first reported by Buchwald et al., has been observed only in the crystals containing the EL2 defect. This fact was further confirmed by using LT-MBE GaAs crystals before and after rapid thermal annealing (RTA). Only in the n-LT-n sample annealed at 900°C, in which the EL2 defect was formed, the metastable couple (M3/M4) appeared upon hydrogenation. As hydrogenated, the EL2 level was passivated or dissociated. From bias-annealing experiments, the M4 level was completely annihilated by annealing at 573K, where the EL2 level was restored to its original concentration. We speculated from these results that both diffused hydrogen and preexisting arsenic antisite defect (AsGa) are responsible for the formation of the metastable defect(M3/M4).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 417
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Chantre, A., Vincent, V., and Bois, D., Phys. Rev. B 23, 5225 (1981).Google Scholar
[2] Levinson, M., Benton, J. L., and Kimerling, L. C., Phys. Rev. B 27, 6216 (1983).Google Scholar
[3] Lang, D. V., in Deep Centres in Semiconductors, edited by Pantelides, S.T. (Gordon and Breach, New York, 1986) Chap. 7, p. 489.Google Scholar
[4] Buchwald, W. R., Johnson, N. M., and Trombetta, L. P., Appl. Phys. Lett. 50, 1007 (1987).Google Scholar
[5] Buchwald, W. R., Gerardi, G. J., Poindexter, E. H., Johnson, N. M., Grimmeiss, H. G., and Keeble, D. J., Phys. Rev. B 40, 2940 (1989).Google Scholar
[6] Tabata, A. S., Pudensi, M. A. A. and Machado, A. M., J. Appl. Phys. 65, 4076 (1989).Google Scholar
[7] Pfeiffer, G. and Weber, J., Materials Science Forum, 143–147, 873 (1994).Google Scholar
[8] Kaufmann, U., Klausmann, E., Schneider, J., and Ch, H.. Alt, Phys. Rev. B 43, 12106 (1991).Google Scholar
[9] Shinagawa, T. and Okumura, T.: Mat. Res. Soc. Symp. Proc. Vol.378, 447 (1995).Google Scholar
[10] Martin, G. M., Mitonneau, A. and Mircea, A., Electron. Lett. 13, 191 (1977).Google Scholar
[11] Lin, T. C., and Okumura, T., Jpn. J. Appl. Phys. 35, 1630 (1996).Google Scholar
[12] Ball, C. A. B., Conibear, A. B., and Leitch, A. W. R., Inst. Phys. Conf. Ser. No 136, Chap. 11,697 (1993).Google Scholar
[13] Shinagawa, T. and Okumura, T., J. Appl. Surf. Sci. (to be published).Google Scholar
[14] Vincent, G., Bois, D. and Chantre, A., J. Appl. Phys. 53, 3643 (1982).Google Scholar