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Refractoriness of High-Current and Low Acceleration Voltage Arsenic-Ion Implanted Polycrystalline Silicon Against Fluorine Chemistry

Published online by Cambridge University Press:  25 February 2011

Yasuyuki Saito
Yasuyuki Saito*
Affiliation:
Nichiden-Toshiba Information System, Inc., Research Laboratories in Toshiba Horikawa-cho Works. 72, Horikawa-cho, Saiwai-ku, Kawasaki 210, Japan. (now Microelectronics Center Tamagawa Works, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210) Present domicile and actual residence: Apartment Sanyu-Kopo, Room No. 202, 342 Hazawa-cho, Kanagawa-ku, Yokohama 221, Japan.
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Abstract

The author observed that both high-current-ion-beam and low-accelerationvoltage arsenic-implanted polycrystalline silicon-film surfaces are resistant to radical-fluorine-gas-etching. If we accept the simple assumption that a depth profile of concentration distribution of the implanted high-dose As atoms in polycrystalline Si film can be expressed with a standardized distribution function in the previous report of S. Furukawa, H. matsumura, and H. Ishiwara [Jpn. J. Appl. Phys. 11, 134 (1972)], we can take the premise that the chemical bonding reaction itself between radical-fluorine atoms and silicon atoms is prevented rather than that the covering of an arsenic- metal thin layer like amorphous state prevents the chemical bonding- reaction. We present a model of the prevention Si-F bond formation by high-dose arsenic implantation at low acceleration voltage. The model seems to be related to potential barrier increase and lattice vibration suppression for electromagnetic force-phonon interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 135
Copyright
Copyright © Materials Research Society 1993

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