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Reflection High-Energy Electron Diffraction as an Intrinsic Material Property Sensor for Machine Condition Transfer Function in Molecular Beam Epitaxial Growth of III-V Compound Semiconductors

Published online by Cambridge University Press:  10 February 2011

P. Chen ,
C. Wangt ,
A. Madhukar ,
T. Khant ,
A. Small ,
Z. Yan  and
R. Viswanathan
P. Chen
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS) Materials Science & Engineering Department
C. Wangt
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS) Mathematics Department
A. Madhukar
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS) Materials Science & Engineering Department Mathematics Department
T. Khant
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS) Mathematics Department
A. Small
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS) Physics Department, University of Southern California, Los Angeles, CA 90089, pingchen@rcf.usc.edu
Z. Yan
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS) Physics Department, University of Southern California, Los Angeles, CA 90089, pingchen@rcf.usc.edu
R. Viswanathan
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS) Materials Science & Engineering Department
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Abstract

A new approach is introduced for identifying a relation between the growth parameters measured in two molecular beam epitaxy systems, thereby realizing transfer of optimized growth conditions transfer. Test results show that the proposed approach is promising.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 47
Copyright
Copyright © Materials Research Society 1998

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References

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