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Recovery Process for Light-Soaked A-Si:H

Published online by Cambridge University Press:  16 February 2011

Qing Zhang ,
Hideki Takashima ,
Jiang-Huai Zhou ,
Minoru Kumeda  and
Tatsuo Shimizu
Qing Zhang
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Hideki Takashima
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Jiang-Huai Zhou
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
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Abstract

We have found that a broad distribution of the annealing activation energies is necessary to interpret the annealing behavior for the density of metastable defects created by 77K light soaking, while a narrow distribution is sufficient for describing the annealing behavior for the density of those created by RT light soaking. We have also found that the recovery of the degraded photoconductivity is easier than the annealing of the photocreated defects for both 77K and RT light soaking and that, at a given defect density, 77K light soaking degrades the photoconductivity more than RT light soaking. Our results suggest that the photocreated defects with a smaller annealing activation energy are more effective recombination centers than those with a larger annealing activation energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 269
Copyright
Copyright © Materials Research Society 1994

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References

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