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Recombination-enhanced Dislocation Glides—The Current Status of Knowledge

Published online by Cambridge University Press:  31 January 2011

Koji Maeda
Koji Maeda*
Affiliation:
maeda@exp.t.u-tokyo.ac.jp, The University of Tokyo, Department of Applied Physics, Tokyo, Japan
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Abstract

To update the status of knowledge on the recombination-enhanced dislocation glides (REDG) in semiconductors, which is one of the causes of serious degradation in bipolar devices, research progress achieved for the last decade has been surveyed. Rather than presenting a complete review over a wide range of material systems, a particular attention has been paid to the REDG effect in 4H-SiC for which a lot of information has been accumulated owing to extensive studies. Although the REDG effect exhibits features that could be interpreted in terms of the phonon-kick mechanism, conclusive proof is still lacking.

Keywords

dislocationsradiation effectssemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B02-03
Copyright
Copyright © Materials Research Society 2010

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References

1. Maeda, K. and Takeuchi, S., Dislocation in Solids, 10, ed. by Nabarro, F. R. N. and Duesbery, M. S. (North-Holland, Amsterdam, 1996) pp.435–504.Google Scholar
2. Lendenmann, H., Dahkquist, F., Johansson, N., Söderholm, R., Nilsson, P. A., Bergman, J. P. and Skytt, P., Mater. Sci. Forum, 353–356, 727 (2001).10.4028/www.scientific.net/MSF.353-356.727Google Scholar
3. Bergman, J. P., Lendenmann, L., Nilsson, P. Å., Lindelfelt, U. and Skytt, P., Mater. Sci. Forum, 353–356, 299 (2001).10.4028/www.scientific.net/MSF.353-356.299Google Scholar
4. Ha, S., Skowronski, M., Sumakeris, J. J., Paisley, M. J. and Das, M. K., Phys. Rev. Lett., 92, 175504 (2004).10.1103/PhysRevLett.92.175504Google Scholar
5. Tomiya, S., Hino, T., Goto, S., Takeya, M., Ikeda, M., IEEE J. Selected Topics in Quantum Electronics, 10, 1277 (2004).10.1109/JSTQE.2004.837735Google Scholar
6. Maeda, K., Suzuki, K., Ichihara, M., Nishiguchi, S., Ono, K., Mera, Y. and Takeuchi, S., Physica B, 273–274, 134 (1999).10.1016/S0921-4526(99)00424-XGoogle Scholar
7. Pilyankevich, A. N. and Britun, V. F., Phys. Stat. Sol. (a), 82, 449 (1984).10.1002/pssa.2210820214Google Scholar
8. Maeda, K., Suzuki, K., Ichihara, M., Microsc. Microanal. Microstruct., 4, 211 (1993).10.1051/mmm:0199300402-3021100Google Scholar
9. Yang, J. W., Ning, X. J. and Pirouz, P., in Japan-US Workshop on Functional Fronts in Advanced Ceramics (Ceramic Society of Japan, 1994) pp.55–58.Google Scholar
10. Galeckas, A., Linnros, J. and Pirouz, P., Appl. Phys. Lett., 81, 883 (2002).10.1063/1.1496498Google Scholar
11. Maeda, K., Suzuki, K., Yamashita, Y. adn Mera, Y., J. Phys. Cond. Matt., 12, 10079 (2000).10.1088/0953-8984/12/49/308Google Scholar
12. Ohno, Y., Taishi, T. and Yonenaga, I., phys. stat. sol. A, 206, 1904 (2009).10.1002/pssa.200881466Google Scholar
13. Levade, C., Fares, A. and Vanderschaeve, G., Philos. Mag. A, 69, 855 (1994).10.1080/01418619408242524Google Scholar
14. Galeckas, A., Linnros, J. and Pirouz, P., Phys. Rev. Lett., 96, 025502 (2006).10.1103/PhysRevLett.96.025502Google Scholar
15. Caldwell, J., Stahlbush, R. E., Hobart, K. D., Glembocki, O. J. and Liu, K. X., Appl. Phys. Lett., 90, 143519 (2007).10.1063/1.2719650Google Scholar
16. Levade, C. and Vanderschaeve, G., J. Crystal Growth, 197, 565 (1999).10.1016/S0022-0248(98)00754-4Google Scholar
17. Ohno, Y., Appl. Phys. Lett., 87, 181909 (2005).10.1063/1.2123392Google Scholar
18. Roshetov, V. I., Armeeva, A. É., Bushueva, G. V., Talenskii, O. N., Pendyur, A. A., Pechennov, A. N. and Tyapunina, N. A., Sov. Phys. Solid State, 29, 689 (1087).Google Scholar
19. Negrii, V. D., Osipyan, Yu. A. adn Lomak, N. V., phys. sta. sol. A, 126, 49 (1991).10.1002/pssa.2211260106Google Scholar
20. Maeda, K. and Takeuchi, S., Jpn. J. Appl. Phys., 29, 1151 (1990).10.1143/JJAP.29.1151Google Scholar
21. Maeda, K., Sato, M., Kubo, A. and Takeuchi, S., J. Appl. Phys., 54, 161 (1983).10.1063/1.331725Google Scholar
22. Maeda, K. and Takeuchi, S., Dislocations in Solids, (Univ. of Tokyo Press, Tokyo, 1984) 433.Google Scholar
23. Maeda, K. and Takeuchi, S., Appl. Phys. Lett., 42, 664 (1983).10.1063/1.94065Google Scholar
24. Küsters, K. and Alexander, H., Physica B, 116, 1151 (1983).10.1016/0378-4363(83)90312-1Google Scholar
25. Maeda, N., Kimura, K. and Takeuchi, S., Bull. Acad. Sci. USSR Phys. Ser. 51, 93 (1987).Google Scholar
26. Yonenaga, I., Werner, M., Bartch, M., Messerschmidt, U. and Weber, E. R., phys. stat. sol. A, 171, 35 (1999).10.1002/(SICI)1521-396X(199901)171:1<35::AID-PSSA35>3.0.CO;2-A3.0.CO;2-A>Google Scholar
27. Skowronski, M. and Ha, S., J. Appl. Phys., 99, 011101 (2006).10.1063/1.2159578Google Scholar
28. Ha, S., Skowronski, M. and Lendenmann, H., J. Appl. Phys., 96, 393 (2004).10.1063/1.1756218Google Scholar
29. Zhang, N., Chen, Y., Zhang, Y., Dudley, M. and Stahlbush, R. E., Appl. Phys. Lett., 94, 122108 (2009).10.1063/1.3105944Google Scholar
30. Chen, B., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A. and Okumura, H., J. Appl. Phys., 106, 074502 (2009).10.1063/1.3236579Google Scholar
31. Caldwell, J., Glembocki, O. J., Stahlbush, R. E. and Hobart, K. D., J. Elec. Mater., 37, 699 (2008).10.1007/s11664-007-0311-5Google Scholar
32. Holt, D. B. and Yacobi, B. G., Extended Defects in Semiconductors (Cambridge Univ. Press, Cambridge, 2007).10.1017/CBO9780511534850Google Scholar
33. Gutmanas, E. Y., Travitzky, N., Haasen, P., phys. stat. sol. A, 51, 435 (1979).10.1002/pssa.2210510215Google Scholar
34. Shikhsaidov, M. S., Sov. Phys. Solid State, 23, 968 (1981).Google Scholar
35. Mdivanyan, B. E. and Shikhsaidov, M. S., phys. stat. sol. A, 107, 131 (1988).10.1002/pssa.2211070112Google Scholar
36. Ohno, Y., Taishi, T. and Yonenaga, I., phys. stat. sol. A, 206, 1904 (2009).10.1002/pssa.200881466Google Scholar
37. Maeda, K. and Takeuchi, S., J. Phys. (Paris) 44, C4–375 (1983).10.1051/jphyscol:1983445Google Scholar
38. Schreiber, J. and Vasnyov, S., J. Phys. Cond. Matt., 16, S75 (2004).10.1088/0953-8984/16/2/009Google Scholar
39. Miyanagi, T., Tsuchida, H., Kamata, I., Nakamura, T., Nakayama, K., Ishii, R. and Sugawara, Y., Appl. Phys. Lett., 89, 062104 (2006).10.1063/1.2234740Google Scholar
40. Kimerling, L. C. and Lang, D. V., Inst. Phys. Conf. Ser. 23, 589 (1975).Google Scholar
41. Weeks, J. D., Tully, J. C. and Kimerling, L. C., Phys. Rev. B, 12, 3286 (1975).10.1103/PhysRevB.12.3286Google Scholar
42. Sumi, H., Phys. Rev. B, 29, 4616 (1984).10.1103/PhysRevB.29.4616Google Scholar
43. Blumenau, A. T., Fall, C., Jones, R., Öberg, S., Frauenheim, T. and Briddon, P. R., Phys. Rev. B, 68, 174108 (2003).10.1103/PhysRevB.68.174108Google Scholar
44. Savini, G., Savini, G., Marocchi, A., Suarez-Martinez, I., Haffenden, G., Heggie, M. I. and Öberg, S., Physica B, 401–402, 62 (2007).10.1016/j.physb.2007.08.114Google Scholar
45. Shinozuka, Y., this symposium.Google Scholar
46. Eberlein, T. A. G., Jones, R., Blumenau, A. T., Öberg, S. and Brddon, P. R., Appl. Phys. Lett., 88, 082113 (2006).10.1063/1.2179115Google Scholar
47. Miao, M. S., Limpijumnong, S. and Lambrecht, R. L., Appl. Phys. Lett., 79, 4360 (2001).10.1063/1.1427749Google Scholar
48. Lindefelt, U., Iwata, H., Öberg, S. and Briddon, P. R., Phys. Rev. B, 67, 155204 (2003).10.1103/PhysRevB.67.155204Google Scholar
49. Galeckas, A., Hallén, A., Majdi, S., Linnros, J. and Pirouz, P., Phys. Rev. B, 74, 233203 (2006).10.1103/PhysRevB.74.233203Google Scholar
50. Nishino, N., Tajima, M., Nishiguchi, T., Hayashi, T., Kinoshita, H. and Shiomi, H., Jpn. J. Appl. Phys., 46, L973 (2007).Google Scholar
51. Hong, M. H., Samant, A. V., Pirouz, P., Philos. Mag. A, 80, 919 (2000).10.1080/01418610008212090Google Scholar
52. Maeda, K., Suzuki, K., Fujita, S., Ichihara, M., Hyodo, S., Philos. Mag. A, 57, 573 (1988).10.1080/01418618808214408Google Scholar
53. Hong, M.H., Samant, A.V. and Pirouz, P., Philos. Mag. A, 80, 919 (2000).10.1080/01418610008212090Google Scholar
54. Hirth, J.P. and Lothe, J., Theory of Dislocations, 2nd Edition (John-Wiley & Sons, New York, 1982) pp.806–809.Google Scholar