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Recent Progress in Atomic Layer Epitaxy of III–V Compounds

Published online by Cambridge University Press:  16 February 2011

S. M. Bedair
S. M. Bedair*
Affiliation:
North Carolina State University, Dept. of Electrical and Computer Engineering, Raleigh, North Carolina 27695-7911
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Abstract

The potential applications of Atomic Layer Epitaxy of III–V compounds will be outlined. These include the growth of special structures and devices such as ordered alloys, ultra-thin quantum wells, non-alloyed contacts, planar doped FET's and HBT's. Also, the main challenges facing ALE will be outlined along with possible solutions. These include reactor design, control of carbon doping and the growth of ternary alloys. A general assessment of the ALE technology will be provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 101
Copyright
Copyright © Materials Research Society 1991

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References

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