Article contents
Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors
Published online by Cambridge University Press: 16 February 2011
Abstract
A modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1991
References
REFERENCES
- 10
- Cited by