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Real time In Situ X-Ray Topographic Observation of Deformation of Single Crystals and Thin Films

Published online by Cambridge University Press:  10 February 2011

Z. B. Zhao ,
J. Hershberger ,
A. Chiaramonti ,
Z. U. Rek  and
J. C. Bilello
Z. B. Zhao
Affiliation:
Center for Nanomaterials Science, Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI 48109-2136
J. Hershberger
Affiliation:
Center for Nanomaterials Science, Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI 48109-2136
A. Chiaramonti
Affiliation:
Center for Nanomaterials Science, Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI 48109-2136
Z. U. Rek
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stansford University, CA 94309
J. C. Bilello
Affiliation:
Center for Nanomaterials Science, Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI 48109-2136
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Abstract

An experimental apparatus, which is capable of performing real time in situ X-ray topographic observation of deformation process via synchrotron white beam topography, has been developed. This device enables both tensile data (load-displacement) and topographic images to be recorded simultaneously. It has been utilized to study the deformation behaviors of crystals of Mo and W.These specimens have been subject to mechanical cycling with increasing load, and their deformation processes have been observed in real time and in situ via x-ray topography. This leads to the observation of several phenomena, which would have been difficult to reveal by other experimental techniques. They include stress concentration, microyielding, reversible variation of contrasts and stress relaxation. In addition, the deformation behaviors of small angle grain boundaries have also been examined. Furthermore, the specimens can be heated through a heating device attached to the tensile stage, which allows high temperature topography to be performed in real time. The technique has been applied to the Ta films on Si (100) substrates. With increasing temperature, the topographic observations have revealed that the Ta films yield, fracture and then proceed to delaminate from their substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 524: Symposium V – Application of Synchrotron Radiation Techniques…IV , 1998 , 81
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Bilello, J. C., Schmitz, H. A. and Dew-Hughes, D., J. Appl. Phys., 65, P.2282 (1989).Google Scholar
2. Tanner, D.K., X-ray Diffraction Topography, (Pergamon, Oxford, 1976).Google Scholar
3. Schmitz, H. A., Bilello, J. C. and Rek, Z. U., Materials Science and Engr., 81, P.283 (1986)Google Scholar
4. Bilello, J. C., Mat. Res. Soc. Symp. Proc., 82, P.197 (1987).Google Scholar
5. Lengeler, B., Mikrochim. Acta [Wien], 1, P.455 (1987).Google Scholar
6. George, A. and Michot, G., J. Appl. Cryst., 15, P.412(1982).Google Scholar
7. Michot, G., Oliveira, M. L. L. de and Goerge, A., Materials Science and Engr., A176, P.99(1994).Google Scholar
8. Yoshioka, M. and Kawamura, K., Jpn. J. Appl. Phys., 34, p. L1553 (1995).Google Scholar
9. Polcarova, M. and Bradler, J., J. Appl. Cryst., 21, P. 169(1988).Google Scholar
10. Wasserbach, W., Phys. Stat. Sol., (a), 151, P.61(1995).Google Scholar
11. Cabral, C. Jr; Clevenger-LA, L. A. and Schad, R. G., J. Vac. Sci. & Technol. B, 12, P.2818 (1994).Google Scholar
12. Kondo, K., Nakabayashi, M., Kawakami, K. and Chijimatsu, T., J. Vac. Sci. Technol. A, 11, P.3067(1993).Google Scholar
13. Zhao, Z. B., Hershberger, J., Rek, Z. U. and Bilello, J. C., SSRL 1996 Activity report, A 266, 1996.Google Scholar
14. Zhao, Z. B., Hershberger, J., Rek, Z. U. and Bilello, J. C., Mat. Res. Soc. Symp: In Situ Diagnostics and Materials Processing, 1997, in pressGoogle Scholar
15. Zhao, Z. B., Hershberger, J., Chiaramonti, A., Rek, Z. U. and Bilello, J. C., SSRL 1997 Activity report, in press.Google Scholar