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Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

Published online by Cambridge University Press:  21 February 2011

Dilip P. Vijay ,
Seshu B. Desu  and
Wei Pan
Dilip P. Vijay
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
Wei Pan
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
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Abstract

In this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 133
Copyright
Copyright © Materials Research Society 1993

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References

1 Parker, L. and Tasch, A., IEEE circuit and Device Mag., 17, January, 1990.Google Scholar
2 Sze, S.M., VLSI Electronics, McGraw-Hill Publishing Company (1988).Google Scholar
3 Kwok, C.K., Vijay, D.P., and Desu, S. B., Proceedings of the 4th International Symposium on Integrated Ferroelectrics, Monterey, CA (1992).Google Scholar
4 Poor, M.R., Hurd, A.M., Fledermann, C.B., and Wu, A.Y., Mat. Res. Soc. Symp. Proc., 200, 211 (1990).Google Scholar
5 Saito, S. and Kuramasu, K., Jpn. J. Appl. Phys., 31, 135 (1992).Google Scholar
6 Yi, G. and Sayer, M., Ceram Bull., 70(7), 1173 (1991).Google Scholar
7 Mogab, C.J., Adams, A.C., Flamm, D.L., J. Appi. Phys., 49, 3796 (1978).Google Scholar
8 Desu, S.B. and Kwok, C.K., Mat. Res. Soc. Symp. Proc., 200, 267 (1990).Google Scholar
9 Weast, R.C. and Astle, M.J., CRC Handbook of Chemistry and Physics, CRC Press Inc. (1980).Google Scholar