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Reactive Ion Etching of Copper with SiCl4 and CCl2F2

Published online by Cambridge University Press:  26 February 2011

B. J. Howard ,
S. K. Wolterman ,
W. J. Yoo ,
B. Gittleman  and
CH. SteinbrÜchel
B. J. Howard
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12180–3590
S. K. Wolterman
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12180–3590
W. J. Yoo
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12180–3590
B. Gittleman
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12180–3590
CH. SteinbrÜchel
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12180–3590
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Abstract

Copper may become an alternative to aluminum as an interconnect material in future multilevel metallization schemes if it is possible to pattern Cu by dry etching in a manufacturable process. Here we report results on the reactive ion etching of Cu in SiCl4 /Ar, SiCl4/N2, and CCl2F2/Ar plasmas. Etch rates have been investigated as a function of various plasma parameters, such as gas composition, pressure, etc., and substrate temperature. We have obtained etch rates as high as 850 Å /min with SiCl4/N2 and a substrate temperature of ∼ 200 ° C. Also, it appears feasible to pattern Cu anisotropically using either polyimide or amorphous carbon as a high-temperature etch mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 129
Copyright
Copyright © Materials Research Society 1991

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