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RBS/Channeling Diffusion Studies of High Energy Au Implanted Mg Single Crystals

Published online by Cambridge University Press:  28 February 2011

R. C. Da Selva
Affiliation:
Departamento de Física, Instituto de Ciências e Engenharia Nucleares, LNETI, E.N. 10, 2685 Sacavém, Portugal
M. F. Da Silva
Affiliation:
Departamento de Física, Instituto de Ciências e Engenharia Nucleares, LNETI, E.N. 10, 2685 Sacavém, Portugal
L. Thomé
Affiliation:
Centre de Spectrometrie Nucléaire et de Spectrometrie de Masse, CNRS-IN2P3, Bat. 108, 91405 Orsay, France
A. A. Melo
Affiliation:
Centra de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1699 Lisboa Codex, Portugal
J. C. Soares
Affiliation:
Centra de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1699 Lisboa Codex, Portugal
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Abstract

RBS/channeling analyses of high energy Au implantation into Mg are presented. The diffusion behaviour of Au was studied and the occurrence of essentially two distinct regimes were observed: the segregation regime at lower temperatures correlated with the damage introduced by the high energy implantation and the higher temperature regime as a normal thermally activated process of back-diffusion.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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