Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-11T14:00:08.417Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Processing of Buried Sil−xGex Strained Layers; Photoluminescence Decay and Misfit Dislocation Generation.

Published online by Cambridge University Press:  28 February 2011

D.C. Houghton  and
N.L. Rowell
D.C. Houghton
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, Ontario, KIA OR6, Canada
N.L. Rowell
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, Ontario, KIA OR6, Canada
Get access

Abstract

The thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 509
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. King, C.A., Hoyt, J.L., Gibbons, J.F., IEEE Trans Electron. Devices 36, 2093, (1989).Google Scholar
2. Patton, G.L., Iyer, S., Delage, S., Tiwari, S. and Stork, J.M.C., IEEE Electron. Device Letters, 9, 165 (1988).Google Scholar
3. Houghton, D.C., Timbrell, P.Y. and Baribeau, J-M, J. of Mat. Res. in press (1990).Google Scholar
4. Houghton, D.C., Appl. Phys. Lett. in press (1990).Google Scholar
5. Houghton, D.C., Appl. Phys. Lett. in press (1990).Google Scholar
6. Perovic, D.D., Houghton, D.C., Baribeau, J-M. and Weatherly, G.C., Thin Solid Films, 183,141 (1990); andD.D. Perovic, D.C.Houghton and G.C.Weatherly, Mat. Res. Soc. Symp. D, Boston (1989).Google Scholar
7. Houghton, D.C., Lockwood, D.J., Dharma-Wardana, M.W.C., Fenton, E.W., Baribeau, J-M. and Denhoff, M.W., J. Cryst. Growth 81, 434 (1987).Google Scholar
8. Noel, J-P, Rowell, N.L., Houghton, D.C and Perovic, D.D, Appl. Phys. Lett. in press (1990).Google Scholar
9. Alexander, H. and Haasen, P., Solid State Physics (Academic, New York, 1968), vol. 22,p27.Google Scholar
10. Chaudhuri, A.R, Patel, JR and Rubin, LG J. Appl. Phys. 33, 2736 (1962).Google Scholar