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Rapid Thermal Annealing of Silicon Using an Ultrahigh Power Arc Lamp

Published online by Cambridge University Press:  15 February 2011

R. T. Hodgson ,
J. E. E. Baglin ,
A. E. Michel ,
S. Mader  and
J. C. Gelpey
R. T. Hodgson
Affiliation:
IBM Thomas J. watson Research Center, Yorktown Heights, New York 10598
J. E. E. Baglin
Affiliation:
IBM Thomas J. watson Research Center, Yorktown Heights, New York 10598
A. E. Michel
Affiliation:
IBM Thomas J. watson Research Center, Yorktown Heights, New York 10598
S. Mader
Affiliation:
IBM Corporation, Hopewell Junction, New York 12533
J. C. Gelpey
Affiliation:
Eaton Ion Implantation Systems, 16 Tozer Road, Beverly, MA 01915
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Abstract

We have used an ultrahigh power, 100kW vortex cooled arc lamp to anneal As+ implant damage in <100> silicon wafers. When the wafer temperature was held above 1100°C for ∼1sec, TEM analysis indicated that the material was free of extended defects.The dopant diffused much more rapidly than would be expected from the usual models. However, preliminary results indicate that defect free material can be produced with dopant movement limited to ∼100Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 355
Copyright
Copyright © Materials Research Society 1983

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References

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