Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T12:34:58.876Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Annealing of As in Si

Published online by Cambridge University Press:  25 February 2011

N.T. Shih ,
F.S. Huang ,
C.H. Chu  and
W.S. Chen
N.T. Shih
Affiliation:
The Institute of Electrical Engineering, National Tsing-Hua Univ. Hsin-Chu, Taiwan, R.O.C.
F.S. Huang
Affiliation:
The Institute of Electrical Engineering, National Tsing-Hua Univ. Hsin-Chu, Taiwan, R.O.C.
C.H. Chu
Affiliation:
The Institute of Materials Engineering, National Tsing-Hua Univ. Hsin-Chu, Taiwan, R.O.C
W.S. Chen
Affiliation:
The Institute of Electrical Engineering, National Tsing-Hua Univ. Hsin-Chu, Taiwan, R.O.C.
Get access

Abstract

The results of a detailed investigation of diffusion of ion implanted As in Si during Rapid Thermal Annealing are reported. A series of experiments has been performed on samples prepared for various thermal treatments, such as peroxidation and preheat. The RTA conditions were chosen at 850°C for 15 seconds in order to study the metastable state. Sample analysis includes depth profiling by RBS and Spreading Resistance measurements, electrical characterization employing Hall measurements, and residual defects by cross-section TEM and planar image. The carrier concentration profile shows the different extent of the mixed Gaussian-Chebyshev polynomial distribution for various prepared samples. We believe the neutral interstitial state I°(Si) survives during RTA for asreceived samples. It gives a Gaussian curve in As profile. The denuded region produced after thermal treatments reduces the oxygen content and creates less 1°(Si) during SPE. So the Gaussian-Chebyshev polynomial distribution was obtained. From the above study, we believe the Gaussian profile can be obtained by controlling RTA conditions This Gaussian-like profile can also suppress hot electron effects by its smooth gradient (generating small electric field) near drain and large overlap under spacer (making large electric field away from gate). So we fabricated rapid thermal annealing singlediffusion drain n-MOSFET. The reduction of hot electron effects was studied, too.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 371
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hodgson, R.T., Baglin, J.E.E., Michel, A.E., Mader, S.M., & Gelpey, J.C.. Mat Res. Soc. Proc. 13, 355 (1983).CrossRefGoogle Scholar
2. Kalish, R., Segdwick, T.O., Mader, S.M., and Shats, S.. A.P.L. 44, 107 (1984).Google Scholar
3. Pennycook, S.J.. Narayan, J., and Hollaud, O.W. J. Electrochem. Soc. 132, (1965).Google Scholar
4. Wilson, S.R., Paulson, W.M., Gregory, R.B., Hamdi, A.H., and McDaniel, F.D., J.A.P. 55, 4162 (1984).Google Scholar
5. Sedgwick, T.O., Michel, A.E., Cohen, S.A., Deline, V.R., and Oehrlein, G.S., A.P.L. 47, 848 (1985).Google Scholar
6. Tsai, M., Morehead, F., Baglin, a., and Michel, A., J.A.P. 51, 3230 (1980).Google Scholar
7. Deline, V.R., Kastl, R.H., and Michel, A.E., Program Am. Vac. Sec. (1984).Google Scholar
8. Narayan, J., Holland, O.W., Eby, R.E., Wortman, J.J., Ozguz, V., and Rozgonyi, G.A., A.P.L. 43, 957 (1983).Google Scholar
9. Holland, O.W., Narayan, J., Fathy, D., and Wilson, S.R., J.A.P. 59, 905 (1986).Google Scholar
10. Kamgar, A. and Baiocchi, F.A., Rapid thermal processing, 23, M.R.S. Proceeding (1985)Google Scholar
11. Hoyt, J.L. and Gibbons, J.F., Rapid thernal processing, 15, M.R.S. Proceeding. (1965)Google Scholar
12. Pennycook, S.J. and Culbeatson, R.J., Rapid thernal processing, M.R.S. Proceeding (1985)Google Scholar