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Raman spectrum of group IV nanowires: influence of temperature

Published online by Cambridge University Press:  22 March 2011

J. Anaya ,
C. Prieto ,
J. Souto ,
J. Jiménez ,
A. Rodríguez ,
J. Sangrador  and
T. Rodríguez
J. Anaya
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
C. Prieto
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
J. Souto
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
A. Rodríguez
Affiliation:
Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, 28040 Madrid, Spain
J. Sangrador
Affiliation:
Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Tecnología Electrónica, E.T.S.I.T., Universidad Politécnica de Madrid, 28040 Madrid, Spain
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Abstract

Group IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed.

Keywords

nanostructureRaman spectroscopySi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa12-03
Copyright
Copyright © Materials Research Society 2011

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References

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