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Raman Spectroscopic Evaluation of Silicides Formed with A Scanned Electron Beam

Published online by Cambridge University Press:  15 February 2011

R. J. Nemanich ,
T. W. Sigmon ,
N. M. Johnson ,
M. D. Moyer  and
S. S. Lau
R. J. Nemanich
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California, 94304
T. W. Sigmon
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California, 94304 Standard Electronics Laboratories, Standard, California, 94305
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California, 94304
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California, 94304
S. S. Lau
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California, 94304 University of California, San Diego, La Jolla, California, 92093
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Abstract

Raman scattering and Rutherford backscattering are used to study the products of SEM processing of Pd and Pt thin films on Si(100) substrates. The RBS measurements indicate the compositional depth profile of the resulting silicide while the Raman scattering indicates the crystal structure. For both cases it is found that the resultant silicide is dominated by Pd2 Si (or Pt2Si) structures but evidence of deviations are also noted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 541
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. See for example Thin Films - Interdiffusion and Reactions, Poate, J. M. et al. , eds. (Wiley, New York, 1978).Google Scholar
2. Murarka, S. P., J. Vac. Sci. Technol. 17, 775 (1980).CrossRefGoogle Scholar
3. Poate, J. M., Leamy, H. J., and Sheng, T. T., Appl. Phys. Letters 33, 918 (1978).CrossRefGoogle Scholar
4. Allmen, M. von and Wittmer, M., Appl. Phys. Letters 34, 68 (1979).CrossRefGoogle Scholar
5. Nava, F., Majni, G., Luches, A., Nassisi, V., and Janniti, E., Journal de Physique, Colloque C4, Supplement #5, Vol. 41, p. C4–97 (May 1980).Google Scholar
6. Shibata, T., Sigmon, T. W., and Gibbons, J. F., Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S., eds. (Academic Press, New York, 1980), pp. 530–536.CrossRefGoogle Scholar
7. Sigmon, T. W., Regolini, J. L., Gibbons, J. F., Lau, S. S., and Mayer, J. W., Laser and Electron Beam Processing of Electronic Materials, Anderson, C. L. et al. , eds., (The Electrochemical Society, Inc., Princeton, 1980), pp. 531–533.Google Scholar
8. For a more complete description of Raman scattering see articles in Light Scattering in Solids, Cardona, M. ed. (Springer-Verlag, New York, 1975).CrossRefGoogle Scholar
9. Tsai, C. C., Nemanich, R. J. and Sigmon, T. W., Proc. 15th Int. Conf. Physics of Semiconductors, J. Phys. Soc. Japan 49 Suppl. A, 1265 (1980).Google Scholar
10. Ratnakumar, K. N., Pease, R. F. W., Bartelink, D. J., and Johnson, N. M., J. Vac. Sci. Technol. 16, 1843 (1979).CrossRefGoogle Scholar
11. Elliott, R. P., Constitution of Binary Alloys, First Supplement (McGraw-Hill, New York, 1965) p. 731.Google Scholar