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Quenching Effects in Scanning Tunneling Microscopy Studies of Epitaxial Growth

Published online by Cambridge University Press:  10 February 2011

G. R. Bell
G. R. Bell*
Affiliation:
Centre for Electronic Materials and Devices and Department of Chemistry Imperial College of Science, Technology and Medicine, London, SW7 2BZ, UK
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Abstract

The experimental aspects of rapid-quench scanning tunneling microscopy are discussed. In particular, the effects of sample quenching are investigated in atomic-scale studies of the molecular beam epitaxial growth of GaAs. Implications for the study of the heteroepitaxial system InAs-GaAs are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 77
Copyright
Copyright © Materials Research Society 2000

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References

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