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Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices

Published online by Cambridge University Press:  11 February 2011

F. Khalvati
Affiliation:
Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada.
S. Sivoththaman
Affiliation:
Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada.
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Abstract

Amorphous/crystalline silicon (a-Si/c-Si) heterojunctions are of particular importance in photovoltaic (PV) energy conversion in a cost-effective way. This is principally due to the low temperature (low-T) nature of the process. In this work, we have analyzed a (n)a-Si/(i)a-Si/(p)c-Si heterojunction solar cell structure using theoretical models for internal quantum yield (IQY) and I-V behavior. We considered low-quality (low bulk lifetime), cheaper substrates. Thin, low bulk lifetime substrates in combination with a low-T bulk passivation scheme and low rear surface recombination can lead to a cost effective device fabrication process with competitive conversion efficiency.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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