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Pzt Interaction with Metal and Oxides Studied by Rutherford Backscattering Spectrometry

Published online by Cambridge University Press:  25 February 2011

Peter Revesz ,
Jian Li ,
Nicholas Szabo Jr ,
James W. Mayer ,
David Caudillo  and
Edward R. Myers
Peter Revesz
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Jian Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Nicholas Szabo Jr
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
James W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
David Caudillo
Affiliation:
National Semiconductor, M/S E 140, 2900 Semiconductor Drive, Santa Clara, CA 95052
Edward R. Myers
Affiliation:
National Semiconductor, M/S E 140, 2900 Semiconductor Drive, Santa Clara, CA 95052
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Abstract

Annealing behavior in oxygen ambients of the of the ferroelectric PZT on Hf and Zr electrodes has been studied in the temperature range of 500-800°C using the 3.045MeV O16(∝,∝)O16 resonance in backscattering spectrometry. Internal oxidation of the buried metal electrode was observed. Oxygen concentration of the PZT film decreases with increasing temperature. Pb loss of the PZT film occurred above 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 101
Copyright
Copyright © Materials Research Society 1992

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References

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