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Pyrolytic and Laser Photolytic Growth of Crystalline and Amorphous Germanium Films from Digermane (Ge2H6)

Published online by Cambridge University Press:  25 February 2011

Djula Eres ,
D. H. Lowndes ,
J. Z. Tischler ,
J. W. Sharp ,
D. B. Geohegan  and
S. J. Pennycook
Djula Eres
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
J. Z. Tischler
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
J. W. Sharp
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. B. Geohegan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
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Abstract

High-purity digermane (Ge2H6, 5% in He) has been used to grow epitaxially oriented crystalline Ge films by pyrolysis. Amorphous Ge:H films also have been deposited by pyrolysis and ArF (193 nm) laser-induced photolysis. The amorphous-to-crystalline transition and the film's morphology was studied as a function of deposition conditions. The film's microstructure, strain and epitaxial quality were assessed using x-ray diffraction curves and scanning and transmission electron microscopy. It was found that commensurate, coherently strained epitaxial Ge films could be grown pyrolytically on (100) GaAs at low (0.05–40 m Torr) Ge2H6 partial pressures, for substrate temperatures above 380°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 517
Copyright
Copyright © Materials Research Society 1989

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References

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