Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-21T15:39:42.977Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser Deposited Na0.5K0.5NbO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Choong-Rae Cho ,
Alex Grishin  and
Byung-Moo Moon
Choong-Rae Cho
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE- 100 44 Stockholm, SWEDEN
Alex Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE- 100 44 Stockholm, SWEDEN
Byung-Moo Moon
Affiliation:
Department of Electrical Engineering, Korea University, Seoul, KOREA
Get access

Abstract

Na0.5K0.5NbO3 films have been grown onto polycrystalline Pt80Ir20 substrates at two different regimes: high (∼ 400 mTorr) and low (∼ 10 mTorr) oxygen pressure. Films grown at high oxygen pressure have been found to be single phase and highly c-axis oriented. The concept of discriminated thermalization has been developed to explain the dynamics of the laser ablation process and to find reliable pulsed laser deposition (PLD) processing conditions. The phenomenon of self assembling of Na0.5K0.5NbO3 films along [001] direction has been observed. On the other hand, films grown at low oxygen pressure have been found to be mixed phase of ferroelectric Na0.5K0.5 NbO3 and paraelectric potassium niobates. Superparaelectric behavior has been observed in these films: 5% tunability at electric field of 100 kV/cm, losses as low as 0.003 and excellent stability to the temperature and frequency changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 603: Symposium KK – Materials Issues for Tunable RF & Microwave Devices , 1999 , 149
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wang, X., Helmersson, U., Olafsson, S., Rudner, S., Wernlund, L., Gevorgian, S., Appl. Phys. Lett., 73, 927 (1998).10.1063/1.122040Google Scholar
2. Cho, C.-R., Grishin, Alex, Appl. Phys. Lett., 75, 268 (1999).10.1063/1.124344Google Scholar
3. Li, S., Eastman, J.A., Newnham, R.E., and Cross, L.E., Phys. Rev. B. 55, 12067 (1997).10.1103/PhysRevB.55.12067Google Scholar
4. Egerton, L., Dillon, D.M., J.Am.Ceram.Soc. 42, 438 (1959).10.1111/j.1151-2916.1959.tb12971.xGoogle Scholar
5. Cheng, Z.-Y., Kaiyar, R.S., Yao, X., Bhalla, A.S., Phys. Rev. 57, 8166 (1998).10.1103/PhysRevB.57.8166Google Scholar