Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-25T06:50:43.187Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Excimer Laser Ablation Deposition of Boron Nitride on Si (100) Substrates

Published online by Cambridge University Press:  25 February 2011

T. A. Friedmann ,
K. F. McCarty ,
E. J. Klaus ,
D. Boehme ,
W. M. Clift ,
H. A. Johnsen ,
M. J. Mills ,
D. B. Ottesen  and
R. H. Stulen
T. A. Friedmann
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
K. F. McCarty
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
E. J. Klaus
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
D. Boehme
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
W. M. Clift
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
H. A. Johnsen
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
M. J. Mills
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
D. B. Ottesen
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
R. H. Stulen
Affiliation:
Sandia National Laboratories, Livermore CA, 94551
Get access

Abstract

We are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (600°C) silicon (100) surfaces in a flowing (0- 10 sccm) ambient background gas of either NH3 or N2 of varying partial pressure (0–100 m Torr). Infrared (IR) reflection spectroscopy indicates the films have short-range hexagonal order. Some films grown at low laser energy densities have shown the cubic phase in IR transmission. Auger electron spectroscopy (AES) indicates the films are nitrogen deficient, which is linked to changes in the target stoichiometry with increasing laser fluence. Raman spectroscopy on the films shows only a strong background luminescence suggesting a high concentration of defects associated with the nitrogen vacancies. Atomic force microscopy (AFM) of the films shows a surface morphology that roughens as the growth rate increases. In order to improve the film stoichiometry it was necessary to actively enhance the nitrogen content of the films. It was found that bombarding films during growth with ions from an ion gun filled with NH3 gas increased the N/B ratio but did not enhance the cubic phase. RF biasing the substrate gave films which showed both cubic and hexagonal features in IR reflection. High resolution transmission electron microscopy (TEM) confirms the presence of cBN grains of ∼ 200Å size in films grown with an RF bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 593
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cheung, Jeffrey T. and Sankur, Haluk, CRC Crit. Rev. in Solid State and Mat. Sci. 15, 63 (1988).CrossRefGoogle Scholar
2. Mishima, O. in Synthesis and Properties of Boron Nitride, edited by Pouch, John J. and Alterovitz, Samuel A. (Trans Tech Publications LTD, Aedermannsdorf, 1990) (Materials Science Forum 54 and 55 (1990) pp. 313–328.)Google Scholar
3. Murakawa, M. and Watanabe, S., Surface and Coatings Tech. 43/44, 128 (1990).Google Scholar
4. Chayahara, Akiyoshi, Yokoyama, Haruki, Imura, Takesh and Osaka, Yukio, Jap. J. App. Phys. 26, L1435 (1987).CrossRefGoogle Scholar
5. Shapoval, S. Y., Petrashov, V. T., Popov, O. A., Westner, A. O., Yoder, M. D. Jr, and Lok, C. K. C., Appl. Phys. Lett. 52, 1885 (1990).CrossRefGoogle Scholar
6. Doll, G. L., Sell, J. A., Taylor, C. A. II, and Clarke, R., Phys. Rev. B 43., 6816 (1991).Google Scholar
7. Higashi, G. S., Chabal, Y. J., Trucks, G. W., and Krishnan Raghavachari, Appl. Phys. Lett. 56, 656 (1990).Google Scholar
8. Geick, R., Penny, C. H., and Rupprecht, G., Phys. Rev. 146, 543 (1966).Google Scholar
9. Gielisse, P. J., Mitra, S. S., Plendl, J. N., Griffis, R. D., Mansur, L. C., Marshall, R., and Pascoe, E. A., Phys. Rev. 155, 1039 (1967).Google Scholar
10. Doll, G. L., Perry, T. A., and Sell, J. A. at the 1990 Fall Meeting of the Materials Research Society in Boston, Symposium A.Google Scholar
11. McKenzie, D. R., Sainty, W. G., and Green, D. in Synthesis and Properties of Boron Nitride, edited by Pouch, John J. and Alterovitz, Samuel A. (Trans Tech Publications LTD, Aedermannsdorf, 1990) (Materials Science Forum 54 and 55 (1990) pp. 193–206.)Google Scholar