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P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation

Published online by Cambridge University Press:  21 February 2011

M. K. Jin ,
T. Yasuda ,
K. Shahzad  and
J. L. Merz
M. K. Jin
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
T. Yasuda
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
K. Shahzad
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, N.Y. 10510
J. L. Merz
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

P-type conduction in bulk ZnSe has been achieved using 1×1016 cm−2 nitrogen (N) ionimplantation followed by a high temperature rapid thermal annealing. Room temperature Hall effect measurements of the sample show that the hole concentration is ∼1×1017 cm−3, and the mobility is ∼30 cm2/V-s. Photoluminescence (PL) measurements were performed to study the optical behavior of the samples, and the results show that the ion implantation damage can be partially repaired by thermal annealing at 900°C or higher. Thermal degradation and recovery of the ion-implantation damage were studied as a function of the annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 345
Copyright
Copyright © Materials Research Society 1992

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References

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