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Pseudomorphic ZnTe/AlSb/GaSb Heterostructures by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

D.L. Mathine ,
J. Han ,
M. Kobayashi ,
R.L. Gunshor ,
D.R. Menke ,
M. Vaziri ,
J. Gonsalves ,
N. Otsuka ,
Q. Fu  and
M. Hagerott
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D.L. Mathine
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
J. Han
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
M. Kobayashi
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
R.L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
D.R. Menke
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
M. Vaziri
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
J. Gonsalves
Affiliation:
Materials Engineering, Purdue University, West Lafayette, Indiana 47907
N. Otsuka
Affiliation:
Materials Engineering, Purdue University, West Lafayette, Indiana 47907
Q. Fu
Affiliation:
Division of Engineering, Brown University Providence, Rhode Island 02912
M. Hagerott
Affiliation:
Division of Engineering, Brown University Providence, Rhode Island 02912
A.V. Nurmikko
Affiliation:
Division of Engineering, Brown University Providence, Rhode Island 02912
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Abstract

A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide bandgap light emitting devices, were grown by molecular beam epitaxy. The low temperature photoluminescence (PL) spectra of ZnTe epilayers showed dominant near-band-edge features related to free, and shallow impurity bound excitons. The PL could be seen at room temperature. Both GaSb and AlSb were doped n-type using a PbSe source.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 121
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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