Hostname: page-component-7bb8b95d7b-cx56b Total loading time: 0 Render date: 2024-09-24T16:36:06.242Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon

Published online by Cambridge University Press:  10 February 2011

A. Giese ,
H. Bracht ,
J.T. Walton  and
N.A. Stolwijk
A. Giese
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany, axel.giese@uni-muenster.de
H. Bracht
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. University of California at Berkeley, Berkeley, CA 94720, U.S.A.
J.T. Walton
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
N.A. Stolwijk
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany
Get access

Abstract

We present out-diffusion of Zn in Si as a new method to study properties of Si vacancies. Out-diffusion experiments were performed on homogeneously Zn-doped Si samples at 1107°C and 1154°C. The resulting concentration-depth profiles were measured by means of spreading-resistance profiling. Based on a diffusion model in which Zn migrates simultaneously via the kick-out and the dissociative mechanism all experimental profiles were modeled by computer simulations. The calculations reveal that out-diffusion of Zn from Si occurs to a considerable extent via the dissociative mechanism. Hence, vacancy properties like the equilibrium concentration and the transport capacity can be extracted from profile fittings. The results are compared with literature data deduced from in-diffusion experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 395
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bracht, H., Stolwijk, N.A., and Mehrer, H., Phys. Rev. B 52 16542 (1995).Google Scholar
2. Stolwijk, N.A. and Bracht, H. in Diffusion in Semiconductors and Non-Metallic Solids, edited by Beke, D.L., Landolt-Börnstein Vol. III/33A (Springer-Verlag, Berlin, 1998), pp. 2–1.Google Scholar
3. Bracht, H., Stolwijk, N.A., and Mehrer, H. in Semiconductor Silicon 1994, Vol. 94–10, edited by Huff, H.R., Bergholz, W., and Sumino, K. (The Electrochemical Society, Pennington, New Jersey, 1994), p. 593.Google Scholar
4. Jiingling, W., Pichler, P., Selberherr, S., Guerrero, E., and Pötzl, H.W., IEEE Trans. Electron. Devices ED, 32 156 (1985).Google Scholar
5. Ouwerling, G.L.J., Thesis, Delft University of Technology, (1989).Google Scholar
6. Bracht, H., Stolwijk, N.A., Yonenaga, I., and Mehrer, H., Phys. Stat. Sol. A 137 499 (1993).Google Scholar
7. Bracht, H. and Overhof, H., Phys. Stat. Sol. A 158 47 (1996).Google Scholar
8. Morehead, F.F., Mat. Res. Symp. Proc. 104 99 (1988).Google Scholar
9. Tan, T.Y. and Gösele, U., Appl. Phys. A 37 1 (1985).Google Scholar
10. Zimmermann, H. and Ryssel, H., Appl. Phys. A 55 121 (1992).Google Scholar