Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-24T23:56:31.818Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon

Published online by Cambridge University Press:  28 February 2011

H.B. Harrison ,
A.P. Pogany  and
Y. Komem
H.B. Harrison
Affiliation:
Microelectronics Technology Centre,Rmit,Melbourne,Australia.
A.P. Pogany
Affiliation:
Microelectronics Technology Centre,Rmit,Melbourne,Australia.
Y. Komem
Affiliation:
Dept. of Materials Engineering,Technion,Israel.
Get access

Abstract

Polycrystalline silicon films have been amorphized by implantation with 100keV Ga ions of doses 0.3 and 6×1015cm−2. These films were subsequently recrystallized using either a furnace for longer times lower temperature (∼30 mins, 600° C) or rapid thermal processing (RTP) for shorter times higher temperatures ( ≤ 30 sec, 800° C, 900° C) in an endeavour to suppress any long range movement of the Ga during the anneal phase. It is found that for both the furnace and RTP for temperatures ≤ 800°C no significant movement is observed and that the lower temperature anneal for the highest dose produces the highest electrical conductivity. By contrast however, annealing at 900° C, even though the initial conductivity is higher than for any other anneal we observe a significant reduction with time and extremely rapid movement of the dopant species throughout the original poly layer. An initial rationale for this behaviour is proposed in terms of a liquid phase transformation during annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 329
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tandon, J.L., Harrison, H.B., Neoh, C.L., Short, K.T. and Williams, J.S., Appl. Phys. Lett. 40, 228 (1982).Google Scholar
2. Swaminathan, B., Saraswat, K.C., Dutton, R.W. and Kamins, T.I., Appl. Phys. Lett. 40, 795 (1982).Google Scholar
3. Losee, D.L., Lavine, J.P., Trabka, E.A., Lee, S.T. and Jarman, C.M., J. App. Phys. 55, 1218 (1984).Google Scholar
4. Komem, Y. and Harrison, H.B., submitted for publication to Appl. Phys. Lett.Google Scholar
5. Harrison, H.B., Lee, Y.H., Sai-Halasz, G.A., Iyer, S.S., in Materials Issues in Silicon Integrated Circuit Processing Eds. Wittmer, M., Stimmell, J., Strathman, M. (M.R.S. publication, Pittsburgh P.A. 1986).Google Scholar
6. Harrison, H.B., Lee, Y.H., Pogany, A. and Olson, G.L. to be published in MRS Proc. of Rapid Thermal Processing of Electronic Materials Oct. 1987.Google Scholar
7. Harrison, H.B., Sai-Halasz, G.A., Iyer, S.S. and Cohen, S.A., submitted to Appl. Phys. Lett.Google Scholar
8. Elliman, R.G., Carter, G.L., Nucl. Inst. and Meth. 209–210 (1981).Google Scholar
9. Trumbore, F.A., Bell. Syst. Tech. J. 39, 205 (1960).Google Scholar
10. Nygren, E., Williams, J.S., Pogany, A., Elliman, R.G., Olson, G.L., McCallum, J.C.. In Beam Solid Interactions and Transient Processes Ed. Thompson, M.D., Picraux, S.T. and Williams, J.S. (M.R.S. publication Pittsburgh, P.A. 1987). published in M.R.S. Proceedings Dec. 1986.Google Scholar