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Properties of Ferromagnetic GaGdN

Published online by Cambridge University Press:  01 February 2011

J. K. Hite ,
R. P. Davies ,
R. M. Frazier ,
G. T. Thaler ,
C. R. Abernathy ,
S. J. Pearton  and
J. M. Zavada
J. K. Hite
Affiliation:
jhite@ufl.edu, University of Florida, Materials Science and Engineering, University of Florida, MSE, 106 Rhines Hall, Gainesville, FL, 32611-6400, United States, (352)392-9420, (352) 846-1182
R. P. Davies
Affiliation:
rydavies@ufl.edu, University of Florida, Materials Science and Engineering, Gainesville, FL, 32611-6400, United States
R. M. Frazier
Affiliation:
moshun@ufl.edu, University of Florida, Materials Science and Engineering, Gainesville, FL, 32611-6400, United States
G. T. Thaler
Affiliation:
gthal@ufl.edu, University of Florida, Materials Science and Engineering, Gainesville, FL, 32611-6400, United States
C. R. Abernathy
Affiliation:
caber@ufl.edu, University of Florida, Materials Science and Engineering, Gainesville, FL, 32611-6400, United States
S. J. Pearton
Affiliation:
spear@mse.ufl.edu, University of Florida, Materials Science and Engineering, Gainesville, FL, 32611-6400, United States
J. M. Zavada
Affiliation:
john.zavada@us.army.mil, Army Research Office, Research Triangle Park, NC, 27709, United States
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Abstract

Single phase GaGdN and GaGdN:Si films were grown on sapphire substrates. The undoped films were highly resistive films but became conductive with the addition of Si. SQUID magnetometry indicated room temperature ferromagnetism in both types of materials. Structural defects had a strong influence on the magnetic ordering of the material, as seen in a drastic reduction of magnetic moment with degrading crystalline quality. Magnetization of the co-doped film increased with Si content, reaching levels higher than that of the undoped material. Gd-doped AlN films grown in a similar fashion also displayed Curie temperatures above room temperature.

Keywords

ferromagneticmagnetic propertiesnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I01-04
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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