Hostname: page-component-7bb8b95d7b-wpx69 Total loading time: 0 Render date: 2024-10-06T12:42:38.535Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Amorphous Silicon Thin Film Transistors with Phosphorous-Doped Hydrogenated Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

J. H. Choi ,
C. W. Kim ,
H. G. Yang  and
J. H. Souk
J. H. Choi
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
C. W. Kim
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
H. G. Yang
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
J. H. Souk
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
Get access

Abstract

Phosphorous (P) doped hydrogenated microcrystallme silicon (n+μ c-Si:H) films have been prepared by using the hydrogen-diluted plasma enhanced chemical vapor deposition (PECVD) method. The crystallinity of films deposited over the range of SiH4/H2 flow ratios and RF-power is studied by Raman spectroscopy. For a 900 Å thick film deposited at 250°C, a conductivity of 71Ω−1cm−1 and an average crystallinity of 49% is obtained. n+ μ c-Si:H films as well as n+ a-Si:H films are used for both etch stopper and back channel etch type TFTs and the I4-V8 characteristics are compared. For the etch stopper type TFT, the field effect mobility of 0.85 cm2/V.sec, threshold voltages of 2 – 3 V and Ion/Ioff ratio of ∼107 are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 907
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Ban, A., Nishioka, Y., Shimada, T., Okamoto, M., Katayama, M., SID 96 Digest, 93 (1996)Google Scholar
2.Kawai, K., Sakurai, T., Katayama, M., Nagayasu, T., Kondo, N., Nakata, Y., Mizushima, S., Yano, K., Hijikigawa, M.SID 93 Digest, 743 (1993)Google Scholar
3.Hirano, N., Ikeda, N., Yamaguchi, H., Nishida, S.Hirai, Y. and Kaneko, S., IDRC 94, 369 (1994)Google Scholar
4.Kanichi, J., Hasan, E., Griffith, J., Takamori, T. and Tsang, J.C., Mat. Res. Soc. Symp. Proc. 149, 239 (1989)Google Scholar
5.Hsu, K.C., Chen, B.Y., Hsu, H.T., Wang, K.C., Yew, T.R. and Hwang, H.L., Jpn. J. Appl. Phys. Vol. 33 (1994) pp. 639–642Google Scholar
6.Kanichi, J., Appl. Phys. Lett., 53, 1943 (1988)Google Scholar
7.Suzuki, K., “Flat panel displays using amorphous and microcrystalline semiconductor devices” in Amorphous and Microcrystalline Semiconductor Devices. Ed. Kanichi, J. (Artech House, Boston, 1991) p.111Google Scholar
8.Sugahara, A., Seiki, M., Miura, Y. and Shibusawa, M., AMLCD 94 Japan Chapter 184 (1994)Google Scholar
9.Ibaraki, N., Furuda, K. and Takata, H., Conf. Ree. Int. Top. Conf. on Hydrogenated Amorphous Silicon Devices and Technology, 182 (1988)Google Scholar
10.Powell, M.J., Mat. Res. Soc. Sympo. Proc, 33, 259(1984)Google Scholar
11.Powell, M.J., Insulating Films on Semiconductors Eds. Verweij, J.F. and Wolters, D.R. (North-Holland), 245 (1983)Google Scholar