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Properties of Amorphous Silicon Films Deposited at Rates Higher Than 1 μM/MIN.

Published online by Cambridge University Press:  28 February 2011

T. L. Chu ,
Shirley S. Chu ,
S. T. Ang ,
A. Duong  and
Y. X. Han
T. L. Chu
Affiliation:
Southern Methodist University, Dal las, Texas 75275
Shirley S. Chu
Affiliation:
Southern Methodist University, Dal las, Texas 75275
S. T. Ang
Affiliation:
Southern Methodist University, Dal las, Texas 75275
A. Duong
Affiliation:
Poly Solar Incorporated, Garland, Texas 75041
Y. X. Han
Affiliation:
Poly Solar Incorporated, Garland, Texas 75041
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Abstract

The thermal decomposition of disilane in a helium flow has been used for the deposition of hydrogenated amorphous sil icon (a-Si:H) films on various substrates at rates higher than 1 μm/min, and a-SI:H films with thickness up to 20 μm have been deposited in this manner. Their optical properties, photoconductivity, minority carrier diffusion length, gap state density, etc., have been measured. The electronic properties of these films are superior to those of chemical vapor deposited a-Si:H films heretofore reported, indicating that the thermal decomposition of disilane in a hel ium atmosphere is a promising technique for the deposition of a-SI:H films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 49
Copyright
Copyright © Materials Research Society 1986

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