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Profiling electric fields in GaN/InGaN/GaN single quantum wells by electron holography

Published online by Cambridge University Press:  17 March 2011

Juan Cai ,
M. R. Mccartney  and
F. A. Ponce
Juan Cai
Affiliation:
Department of Physics and Center for Solid State ScienceArizona State University, Tempe, AZ 85287-1504
M. R. Mccartney
Affiliation:
Department of Physics and Center for Solid State ScienceArizona State University, Tempe, AZ 85287-1504
F. A. Ponce
Affiliation:
Department of Physics and Center for Solid State ScienceArizona State University, Tempe, AZ 85287-1504
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Abstract

We use electron holography to profile the local internal potential due to spontaneous polarization and piezoelectric effects in strained quantum well structures of wurtzitic group III nitrides. Profiles of the electrostatic potential across a GaN/InxGa1−xN/GaN quantum well structure show the existence of internal electric fields of about –2.2 ± 0.6 MV/cm, and a potential drop across the quantum well of 0.6 ± 0.16 V. The electric fields indicate an average indium composition of 15% in the quantum well, for a thickness of 2.7 nm. This indium composition compares well with measurements by energy-disperse spectroscopy of 18 ± 2 %. Screening effect is not observed under these experimental conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.20
Copyright
Copyright © Materials Research Society 2001

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References

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