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The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.

Published online by Cambridge University Press:  25 February 2011

J.S. Williams ,
D.J. Chivers ,
R.G. Elliman ,
S.T. Johnson ,
E.M. Lawson ,
I.V. Mitchell ,
K.G. Orrman-Rossiter ,
A.P. Pogany  and
K.T. Short
J.S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
D.J. Chivers
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
R.G. Elliman
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia Joint appointment with CSIRO Division of Chemical Physics, Clayton 3168, Australia
S.T. Johnson
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
E.M. Lawson
Affiliation:
AAEC Lucas Heights, Australia
I.V. Mitchell
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
K.G. Orrman-Rossiter
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
A.P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
K.T. Short
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
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Abstract

This paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 205
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Appleton, B.R., Holland, O.W., Narayan, J., Schow III, O.E., Williams, J.S., Short, K.T. and Lawson, E.M., Appl. Phys.Lett 41, 711 (1982).Google Scholar
2. Wilson, I.H. J. Appl. Phys. 53, 1698 (1982).Google Scholar
3. Lawson, E.M., Short, K.T., Williams, J.S., Appleton, B.R., Holland, O.W., and Schow III, O.E., Nucl. Instr. 209/210, 303 (1983).Google Scholar
4. Holland, O.W., Narayan, J. and Appleton, B.R. J.Appl. Phys. 54, 2295 (1983).Google Scholar
5. Lawson, E.M., Williams, J.S., Chivers, D.J., Short, K.T., and Appleton, B.R. AAEC Report E573 (1983).Google Scholar