Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T13:22:26.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Processing Effects on the Electrical and Optical Properties of Sulfur-Related Defect Centers in Silicon and Similarities to the Oxygen Donor*

Published online by Cambridge University Press:  15 February 2011

Richard A. Forman ,
Robert D. Larrabee ,
David R. Myers ,
Willie E. Phillips  and
W. Robert Thurber
Richard A. Forman
Affiliation:
Electron Devices Division, National Bureau of Standards, Washington D.C., 20234
Robert D. Larrabee
Affiliation:
Electron Devices Division, National Bureau of Standards, Washington D.C., 20234
David R. Myers
Affiliation:
Electron Devices Division, National Bureau of Standards, Washington D.C., 20234
Willie E. Phillips
Affiliation:
Electron Devices Division, National Bureau of Standards, Washington D.C., 20234
W. Robert Thurber
Affiliation:
Electron Devices Division, National Bureau of Standards, Washington D.C., 20234
Get access

Abstract

The properties of sulfur-related defects in silicon are shown to differ dramatically from those that would have been expected on the basis of effective mass theory for a simple substitutional double donor. The ratio of the densities of the sulfur states as measured by capacitance-voltage techniques has been observed to vary in specimens fabricated from the same starting resistivity. Optical absorption studies have shown that the deepest sulfur level has a manifold of ground states which anneal at unequal rates at 550°C. Deep-level measurements show that the thermal emission rate at a given temperature and the variety of effects produced depends on annealing history and total sulfur density. The variability of properties of samples of sulfur-doped silicon is similar to those found for the oxygen donors in silicon, thus suggesting a chemical trend for the column VI impurities in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 79
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

The work was conducted as part of the Semiconductor Technology Program at NBS. Portions of this work were supported by the Division of Electric Energy Systems, Department of Energy (Task Order A021-EES). Not subject to copyright.

References

REFERENCES

1. Ghandi, S. K. in: Semiconductor Power Devices (John Wiley & Sons, New York 1977) pp. 2–8.Google Scholar
2. Migliorato, P. and Elliott, C. T., Solid State Electronics 21, 443 (1978).Google Scholar
3. Chatterjee, P. K., Taylor, G. W., Tasch, A. F. Jr. and Fu, H-S., IEEE Trans. Electron Devices ED–26, 564 (1979).Google Scholar
4. Myers, D. R. and Phillips, W. E., Appl. Phys. Lett. 32, 756 (1978).Google Scholar
5. Myers, D. R. and Phillips, W. E., J. Elec. Mater. 8, 781 (1979).Google Scholar
6. Forman, R. A., Appl. Phys. Lett. 37 (9), 776 (1980).Google Scholar
7. Pantelides, S. and Sah, C. T., Solid State Communications 11, 1713 (1972)Google Scholar
8. See, e.g., Corbett, J. W., Radiat. Eff. 6, 3 (1970).Google Scholar
9. Buehler, M. G. and Phillips, W. E., Solid State Electronics 19, 777 (1976).Google Scholar
10. Lang, D. V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
11. Myers, D. R., Koyama, R. Y. and Phillips, W. E., Radiat. Eff. 47, 91 (1980).CrossRefGoogle Scholar
12. Buehler, M. G., Semiconductor Measurement Technology: Microelectronic Test Patterns: An Overview, NBS Spec. Publ. 400-6 ( Aigust 1974).Google Scholar
13. Camphausen, D. L., James, H. M. and Sladek, R. D., Phys. Rev. B 2, 1899 (1970).Google Scholar
14. Ning, T. H. and Sah, C. T., Phys. Rev. B 4, 3482 (1971).CrossRefGoogle Scholar
15. Wruck, D. and Gaworzewski, P., phys. stat. sol. (a) 56, 557 (1979).Google Scholar
16. Evwaraye, A. O., J. Appl. Phys. 48, 3813 (1977).Google Scholar
17. Lang, D. V., Grimmeiss, H., Meijer, E. and Jaros, M., Phys. Rev. B, to be published.Google Scholar
18. See, for example, Braun, S., Grimmeiss, H. G. and Spann, K., J. Appl. Phys. 48, 3883 (1977).Google Scholar
19. Milnes, A. G. in: Deep Impurities in Semiconductors, Chapter 1 (John Wiley and Sons, Inc., New York 1973).Google Scholar