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Processing damage and electrical performance of porous dielectrics in narrow spaced interconnects

Published online by Cambridge University Press:  17 March 2011

F. Iacopi ,
Y. Travaly ,
M. Stucchi ,
H. Struyf ,
S. Peeters ,
R. Jonckheere ,
L.H.A. Leunissen ,
Zs. Tökei ,
V. Sutcliffe  and
O. Richard
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F. Iacopi
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Travaly
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Stucchi
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Struyf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Peeters
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium affiliate from Lam Research, Fremont, Ca.
R. Jonckheere
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
L.H.A. Leunissen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Zs. Tökei
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
V. Sutcliffe
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium affiliate from Texas Instruments, Dallas, Tx
O. Richard
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M.Van Hove
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium E.E. Dept., Katholieke Universiteit Leuven, Belgium
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Abstract

The damage induced in the low-k material upon exposure to dry etch and ash plasmas is a point of major concern in terms of preservation of the dielectric properties. There is urgent need to assess, classify and quantify the extent of such damage to allow the optimization of patterning processes and conditions. Meander-fork structures with spacings between 250nm and 70nm are used in this study as vehicle to compare trends in electrical performance for different dielectrics: SiO2 and two SiOC:H low-k materials with pristine k values of 3.0 and 2.6. Here we demonstrate that the ‘electrical equivalent damage’ model is a valid and precise methodology for assessing dielectric damage upon processing from interline capacitance evaluation. This analysis allows to distinguish between bulk and sidewall modification and to quantify the extent of damage. Moreover, it provides an interpretation for the degradation of leakage current and breakdown field of the interline dielectric, revealing different trends whether due to only sidewall or total damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F1.5
Copyright
Copyright © Materials Research Society 2004

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References

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