Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-20T12:36:36.116Z Has data issue: false hasContentIssue false
  • English
  • Français

Process Induced Modification of the High Frequency Dielectric Behavior of (100) Textured BaxSr1−xTiO3 (x = 0.5 and 0.6) Thin Films

Published online by Cambridge University Press:  17 March 2011

S.B. Majumder ,
M. Jain ,
A. Martinez ,
R.S. Katiyar ,
E.R. Fachini ,
F.W. Van Keuls ,
F.A. Miranda ,
P.K. Sahoo  and
V.N. Kulkarni
S.B. Majumder
Affiliation:
Department of Physics, University of Puerto Rico San Juan, PR 00931.
M. Jain
Affiliation:
Department of Physics, University of Puerto Rico San Juan, PR 00931.
A. Martinez
Affiliation:
Department of Physics, University of Puerto Rico San Juan, PR 00931.
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico San Juan, PR 00931.
E.R. Fachini
Affiliation:
Department of Chemistry, University of Puerto Rico San Juan, PR 00931
F.W. Van Keuls
Affiliation:
NASA, Glenn Research Center, Communication Technology Division, Cleveland OH 44135
F.A. Miranda
Affiliation:
NASA, Glenn Research Center, Communication Technology Division, Cleveland OH 44135
P.K. Sahoo
Affiliation:
Department of Physics, Indian Institute of Technology, Kanpur, 208016, India
V.N. Kulkarni
Affiliation:
Department of Physics, Indian Institute of Technology, Kanpur, 208016, India
Get access

Abstract

Paraelectric BaxSr1−xTiO3 (BST) (x = 0.5 and 0.6) thin films are attractive candidates for the fabrication of various microwave dielectric devices including phase shifters, resonators, filters, oscillators etc. In the present work we have studied the effect of annealing temperature and ambient on the epitaxial quality, surface morphology, dielectric, and phase shifter characteristics of BST thin films deposited on LaAlO3 substrates. The epitaxial quality of the film was markedly improved as the annealing temperature was increased from 1050 to 1100°C. The degree of phase shift increased from 221 to 328° (measured at 14.5 GHz applying a field of 30V/μm) with the improvement of the epitaxial quality of the film. The insertion loss was also increased with the increase in annealing temperature and therefore the effective phase shifter κ factor (defined by the ratio of the degree of phase shift and insertion loss) remained low (∼30°/dB), while annealing these films in N2 ambient significantly reduced the insertion loss, their dielectric breakdown was observed at relatively lower applied voltage as compared to air and oxygen annealed films. The observed electrical behavior was correlated with the composition, chemical state of the constituents and epitaxial quality of the films synthesized under different annealing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.8.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Abe, K., and Komatsu, S., Jpn. J. Appl. Phys. 32, 4186 (1993).Google Scholar
[2] Schwartz, R. W., Clen, P. G., Voigt, J. A., Byhoff, E. R., Stry, M. V., Headly, T. J., and Missert, N. A., J. Am. Ceram. Soc. 82, 2359 (1999).Google Scholar
[3] Tahan, D. M., Safari, A., and Klein, L. C., J. Am. Ceram. Soc. 79, 1593 (1996).Google Scholar
[4] Majumder, S. B., Jain, M., Martinez, A., Katiyar, R. S., Keuls, F. W. Van, and Miranda, F. A., J. Appl. Phys. 90, 896 (2001).Google Scholar
[5] Knauss, L.A., Pond, J.M., Horwitz, J.S., Chrisey, D.B., Mueller, C.H., and Treece, R., Appl. Phys. Lett. 69, 25, (1996).Google Scholar
[6] Horwitz, J.S., Chang, W., Carter, A.C., Pond, J.M., Kirchoefer, S.W., Chrisey, D.B., Levy, J., and Hubert, C., Integrated Ferroelectrics, 22, 279, (1998).Google Scholar
[7] Jain, M., Majumder, S. B., Martinez, A., Katiyar, R. S., Keuls, F. W. Van, and Miranda, F. A., Integrated Ferroelectrics (2001) (Accepted).Google Scholar
[8] Doolittle, L.R., Nucl. Instr. and Meth. B 9, 334, (1985).Google Scholar
[9] Chang, W., Horwitz, J.S., Carter, A.C., Pond, J.M., Kirchoefer, S.W., Gilmore, C.M., and Chrisey, D.B., Appl. Phys. Lett. 69, 25, (1996).Google Scholar