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Process Control of Epi-Layers for SiGe:C Hetero-Structure Bipolar Transistors

Published online by Cambridge University Press:  11 February 2011

Qianghua Xie ,
Erika Duda ,
Mike Kottke ,
Wentao Qin ,
Xiang-Dong Wang ,
Shifeng Lu ,
Martha Erickson  and
Heather B. Kretzschmar
Qianghua Xie
Affiliation:
Process and Materials Characterization Laboratory, Semiconductor Products Sector, Motorola Inc., MD EL 622, 2100 E. Elliot Road, Tempe, Arizona 85284
Erika Duda
Affiliation:
Process and Materials Characterization Laboratory, Semiconductor Products Sector, Motorola Inc., MD EL 622, 2100 E. Elliot Road, Tempe, Arizona 85284
Mike Kottke
Affiliation:
Process and Materials Characterization Laboratory, Semiconductor Products Sector, Motorola Inc., MD EL 622, 2100 E. Elliot Road, Tempe, Arizona 85284
Wentao Qin
Affiliation:
Process and Materials Characterization Laboratory, Semiconductor Products Sector, Motorola Inc., MD EL 622, 2100 E. Elliot Road, Tempe, Arizona 85284
Xiang-Dong Wang
Affiliation:
Process and Materials Characterization Laboratory, Semiconductor Products Sector, Motorola Inc., MD EL 622, 2100 E. Elliot Road, Tempe, Arizona 85284
Shifeng Lu
Affiliation:
Process and Materials Characterization Laboratory, Semiconductor Products Sector, Motorola Inc., MD EL 622, 2100 E. Elliot Road, Tempe, Arizona 85284
Martha Erickson
Affiliation:
Process and Materials Characterization Laboratory, Semiconductor Products Sector, Motorola Inc., MD EL 622, 2100 E. Elliot Road, Tempe, Arizona 85284
Heather B. Kretzschmar
Affiliation:
MOS11, Semiconductor, Products Sector, Motorola Inc., MD OE214, 6501 William Cannon Drive West, Austin, TX, 78735
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Abstract

The SiGe:C hetero-structure bipolar transistor (HBT) has turned into a key technology for wireless communication. This paper describes the metrology tools for SiGe epitaxy process control. Two types of analysis are critical, (1) routine control of SiGe base and Si cap thicknesses, location and thickness of the doping layer, doping dose, Ge composition profile, and their uniformity across the wafer; and (2) root-cause analysis on non-routine problems. This is achieved by developing a transmission electron microscopy (TEM) technique allowing a thickness measurement with a reproducibility better than 3 Å. Charge-compensated low-energy secondary ion mass spectrometry (SIMS) using an optical conductivity enhancement (OCE) allows a Ge composition measurement to a required precision of 0.5 at. %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M2.9
Copyright
Copyright © Materials Research Society 2003

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References

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