Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-20T09:33:32.275Z Has data issue: false hasContentIssue false
  • English
  • Français

Probing the Elementary Surface Reactions of Hydrogenated Silicon PECVD by In-situ ESR

Published online by Cambridge University Press:  09 August 2011

Satoshi Yamasaki ,
Claus Malten ,
Takehide Umeda ,
Jun-Ichi Isoya  and
Kazunobu Tanaka
Satoshi Yamasaki
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Claus Malten
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Takehide Umeda
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Jun-Ichi Isoya
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Kazunobu Tanaka
Affiliation:
Joint Research Center for Atom Technology (JRCAT), 1-1-4, Higashi, Tsukuba, 305-8562, Japan.
Get access

Abstract

The dynamic change of the dangling bond (db) intensity in hydrogenated amorphous silicon (a-Si:H) during H2 and Ar plasma treatments was observed using an in-situ electron-spinresonance (ESR) technique. The experimental results show that the time to reach the steady state between gas-phase H atoms and the a-Si:H surface is less than 1 sec, and Ar plasma treatments create a top-surface region with an extremely high db density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 463
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Collins, R. W., An, I., Nguyen, H. V., Li, Y., and Lu, Y., in Physics of Thin Films, Optical Characterization of Real Surfaces and Films, edited by Francombe, M. H., and Vossen, J. L., (Academic Press, San Diego, 1994) pp 49–125.Google Scholar
2. Ikuta, K., Tanaka, K., Yamasaki, S., Miki, K., and Matsuda, A., Appl. Phys. Lett. 65, 1760 (1994).Google Scholar
3. Toyoshima, Y., Arai, K., Matsuda, A., and Tanaka, K., J. Non-Cryst. Solids 137&138, 765 (1991).Google Scholar
4. S. Yamasaki, Umeda, T., Isoya, J., and Tanaka, K., Appl. Phys. Lett. 70, 1137 (1997).Google Scholar
5. Yamasaki, S., Umeda, T., Isoya, J., and Tanaka, K., J Non-Cryst. Solids 227–230, 83 (1998).Google Scholar
6. Yamasaki, S., Umeda, T., Isoya, J., and Tanaka, K., in Amorphous and Microcrystalline Silicon Technology - 1997, edited by Wagner, S., Hack, M., Schiff, E. A., Schropp, R., and Shimizu, I. (Mat. Res. Soc. Proc. 467, Pittsburgh, PA, 1997), p. 507.Google Scholar
7. Choo, K. Y., Gaspar, P. P. and Wolf, A. P., J. Chem. Phys. 79, 1752 (1975).Google Scholar
8. Collins, R. W. and Cavese, J. M., J. Non-Cryst. Solids 97&98, 1439 (1987).Google Scholar
9. Fukutani, K., Kannbe, M., Futako, W., Kaplan, B., Kamiya, T., Fortmann, C. M. and Shimizu, I., J. Non-Cryst. Solids 227–230, 63 (1998).Google Scholar