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Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam

Published online by Cambridge University Press:  03 September 2012

Carol Trager-Cowan
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
D. McColl
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
F. Sweeney
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
S. T. F. Grimson
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
J-F. Treguer
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
A. Mohammed
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
P. G. Middleton
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
S. K. Manson-Smith
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
K. P. O'Donnell
Affiliation:
Dept. Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, UK
W. Van der Stricht
Affiliation:
IMEC-INTEC, University of Gent, Gent 9000, Belgium
I. Moerman
Affiliation:
IMEC-INTEC, University of Gent, Gent 9000, Belgium
P. Demeester
Affiliation:
IMEC-INTEC, University of Gent, Gent 9000, Belgium
M. F. Wu
Affiliation:
KULeuven, Leuven, Belgium
A. Vantomme
Affiliation:
KULeuven, Leuven, Belgium
D. Zubia
Affiliation:
University of New Mexico, Center for High Technology Materials,1313 Goddard, SE Albuquerque, NM, USA
S. D. Hersee
Affiliation:
University of New Mexico, Center for High Technology Materials,1313 Goddard, SE Albuquerque, NM, USA
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Abstract

In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (1010).

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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