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Pressure Dependence of a Deep Excitonic Level in Silicon*

Published online by Cambridge University Press:  25 February 2011

G.A. Northrop  and
D.J. Wolford
G.A. Northrop
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
D.J. Wolford
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

Certain optically active defects in silicon provide a unique opportunity to observe, in detail, the effect of hydrostatic pressure on a deep level. We present a photoluminescence (5 – 100K) study of one such defect, the I, radiation-damage center, under high hydrostatic pressures (1–50 kbar). While the energy variation of this level indicates the expected mutli-band nature typical of a deep level, a severe and continuous reduction in the observed luminescence intensity was also observed. Temperature dependence, time resolved photoluminescence, and photoluminescence excitation spectroscopy are employed to attempt to discern the mechanism involved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 27
Copyright
Copyright © Materials Research Society 1990

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Footnotes

*

Supported in part by the U.S. Office of Naval Research under contract N00014-85-C-0868.

References

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