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Prepare of ZnAl2O4/-Al2O3 complex substrates and growth of GaN films

Published online by Cambridge University Press:  21 March 2011

Z.X. Bi ,
R. Zhang ,
W. P. Li ,
X.S. Wang ,
S.L. Gu ,
B. Shen ,
Y. Shi ,
Z.G. Liu  and
Y.D. Zheng
Z.X. Bi
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
R. Zhang
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
W. P. Li
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
X.S. Wang
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
S.L. Gu
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
B. Shen
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
Y. Shi
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
Z.G. Liu
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
Y.D. Zheng
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
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Abstract

With the solid phase reaction between the ZnO film and -Al2O3 substrate, the ZnAl2O4/-Al2O3 complex substrate have been prepared. GaN films were then directly grown on this new kind of substrate using light-radiation heating low-pressure metalorganic chemical vapor deposition (LRH-LP-MOCVD) without any nitride buffer layer. The structure and surface morphology of the ZnAl2O4/-Al2O3 substrates and GaN epilayers have been characterized by employing X-ray diffraction (XRD) and scanning electron microscope (SEM). The result show that as the thickness of ZnAl2O4 layer is increased, the film changes from a (111)-oriented single crystal to a poly-crystal, together with the surface morphology transforms from uniform islandsa a to the bulgy-line structure, leading to GaN films grown on ZnAl2O4/ -Al2O3 substrates varying from c-axis oriented single-crystal to poly-crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.39.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

*

rzhang@nju.edu.cn

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