Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-20T04:47:50.020Z Has data issue: false hasContentIssue false

Preparation of opal-based PBG crystals to develop multiple stop bands

Published online by Cambridge University Press:  15 March 2011

Yen-Tai Chen
Affiliation:
Department of Chemical Engineering, Yuan Ze University, 135 Yuan-Tung Rd., Chung-Li, Taiwan 320
Leo Chau-Kuang Liau
Affiliation:
Department of Chemical Engineering, Yuan Ze University, 135 Yuan-Tung Rd., Chung-Li, Taiwan 320 email: lckliau@saturn.yzu.edu.tw
Get access

Abstract

Opal-based photonic band gap (PBG) crystals with multiple stop bands were prepared utilizing a sol-gel method. The fabricating procedure includes colloidal crystal syntheses, dispersion, sedimentation, coating, and thermal treatments. Each of the steps can affect the PBG properties, such as stop band locations and ranges. Different stop bands of the photonic crystals can be produced by controlling the particle sizes prepared by the colloidal crystal syntheses. A PBG crystal film with a certain stop band was formed using a particular size of the colloidal crystals coated on glass substrates. In this study, two layers of different particle sizes of PBG crystal were fabricated by different deposition conditions to demonstrate the feasibility of producing multiple stop bands. These conditions can affect the stack layers and structural regularity for forming the PBG layers. In addition, the stop band intensity of the PBG layer can be further improved by the step of thermal treatments. Results imply that multiple stop bands can be feasibly designed and produced as multiple PBG layers coating with a certain SiO2 particle size for each layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yablonovitch, E., Scientific American, p47 (2001).Google Scholar
2. Yablonovitch, E. Phys. Rev. Lett. 58, 2059∼2062 (1987).Google Scholar
3. John, S. Phys. Rev. Lett. 58, 2486∼2489 (1987).Google Scholar
4. Rogach, A. L.; Kotov, N. A.; Koktysh, D. S.; Ostrander, J. W.; Ragoisha, G. A.; Chem. Mater., 12(9), 27212726 (2000).Google Scholar
5. Sacks, M. D., Tseng, T. Y., J. Am. Ceram. Soc, 67, 526532 (1984).Google Scholar
6. Kao, C. C., 2002 Hsinchu Materials Nanotechnology Forum, Hsinchu, Taiwan.Google Scholar
7. Wijnjohn, J. E. G. J. and Vos, W. L., 281 802–584 (1998).Google Scholar
8. Lin, S.Y., Fleming, J.G., Hetherington, D. L., Smith, B.K., Biswas, R., Ho, K.M., Sigalas, M.M., Zubrzycki, W., Kurtz, S. R., Bur, J., Nature, 394, 251253 (1998).Google Scholar
9. Almeida, Rui M., Portal, Sabine, Current Opinion in Solid State and Materials Science 7, 151157(2003).Google Scholar
10. Stefanou, N., Yannopapas, V., Modinos, A., Computer Physics Communication, 13, 49–47 (1998).Google Scholar
11. Miguez, H., H., , Blanco, A., Meseguer, F., Lopez, C., Phy. Rev. B, 59, 1563, 1999.Google Scholar