Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-25T04:10:41.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of Large, Location-Controlled SI Grains by Excimer Laser Crystallization of α-SI FILM SPUTTERED AT 100°C

Published online by Cambridge University Press:  01 February 2011

Ming He ,
E.J.J. Neihof ,
Y. Van Andel ,
H. Schellevis ,
R. Ishihara ,
J.W. Metselaar  and
C. I. M. Beenakker
Ming He
Affiliation:
mhe@dimes.tudelft.nl, Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands, +31-(0)15 2787031, +31-(0)15 26 22163
E.J.J. Neihof
Affiliation:
e.j.j.neihof@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES),, Laboratory of Electronic Components, Technology and Materials (ECTM),, Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
Y. Van Andel
Affiliation:
y.v.andel@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM),, Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
H. Schellevis
Affiliation:
Schellevis@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
R. Ishihara
Affiliation:
ishihara@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
J.W. Metselaar
Affiliation:
j.w.metselaar@ewi.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
C. I. M. Beenakker
Affiliation:
beenakker@dimes.tudelft.nl, Delft University of Technology,Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Feldmanweg 17, Delft, Zuid Holland, 2628CT, Netherlands
Get access

Abstract

Location-controlled grains with a diameter of 4 μm are successfully prepared by excimer laser crystallization of sputtered α-Si with μ-Czochralski (grain filter) process at a maximum processing temperature of 100°C. By a pulsed DC magnetron sputtering, α-Si film is deposited firstly on non-structured oxidized wafers for a test. It is found that a-Si film is easily ablated even with a low laser fluence when it is deposited with a substrate bias. From a non-biased sputtered α-Si precursor, grains with 1.8 mm in diameter can be prepared with excimer laser crystallization at room temperature. α-Si is then sputtered on the SiO2 with narrow holes (grain filters) and crystallized at room temperature. The location-controlled grains can be successfully prepared in a large energy density window. These location-controlled grains with a low temperature process are promising for single-grain thin film transistors (TFTs) on plastic substrate for an application to system integration on flexible microelectronics.

Keywords

laser annealingsputteringfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-12
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]: Smith, P. M., Carey, P. G. and Sigmon, T. W., Appl. Phys. Lett. 70, 342 (1997).Google Scholar
[2]: Wagner, S., Gleskova, H., Cheng, I.C., Wu, M., Thin Solid Films 430, 15 (2003).Google Scholar
[3]: Imparato, A., Minarini, C., Rubino, A., Tassini, P., Villani, F., Sala, D. D., Amendola, E., Kunst, M.. Neitzert, H.C., Bellone, S., Thin solid films, 487, 58 (2005).Google Scholar
[4]: Gosain, D. P., Noguchi, T. and Usui, S., Jpn. J. Appl. Phys. 39L179 (2000).Google Scholar
[5]: Gosain, D. P., Westwater, J. and Usui, S., Proceedings of 1997 international Workshop on active matrix liquid-crystal displays, 51 (1997).Google Scholar
[6]: Wilt, P.C.van der, Dijk, B.D. van, Bertens, G.J., Ishihara, R., and Beenakker, C.I.M.. Appl. Phys. Lett. 79, 1819 (2001).Google Scholar
[7]: Wikstrom, A. and Gudmundson, P.. Acta Materialia, 482429 (2000).Google Scholar
[8]: Ishihara, R., Deosarran, P., Andel, Y. van, Metselaar, J.W. and Beenakker, C.I.M., to be presented at E-MRS06.Google Scholar
[9]: Reinig, P., Fenske, F., Fuhs, W., Selle, B., J. Non-Cryst. Solids 299–302(2002) 128.Google Scholar