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Preparation of La1.61GeO5-δ Based Oxide Ion Conducting Film by Pulsed Laser Deposition Method and its Application for SOFC

Published online by Cambridge University Press:  01 February 2011

Tatsumi Ishihara  and
Jingwang Yan
Tatsumi Ishihara
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Higashi-ku, Fukuoka, 812–8581, Japan.
Jingwang Yan
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Higashi-ku, Fukuoka, 812–8581, Japan.
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Abstract

La1.61GeO5 thin film was fabricated on porous NiO-Ce0.80Sm0.20O2-δ (SDC) substrates by pulsed laser deposition (PLD) under various deposition conditions and the deposition parameters were optimized for obtaining the dense La1.61GeO5-δ film for the electrolyte of SOFC. It has been found that the high substrate temperature and the low oxygen pressure in chamber are suitable for obtaining the dense La1.61GeO5-δ thin film on porous NiO-SDC anode substrate. Since the as-deposited film is amorphous state, post-anneal treatment is essential for obtaining the crystalline La1.61GeO5-δ film. Under the optimized deposition condition, a dense and La1.61GeO5-δ thin film with a thickness of 3 μm can be successfully obtained. The obtained La1.61GeO5-δ film exhibits the electromotive force, which is slightly smaller that that of the theoretical open circuit potential. The power generation property of the cell using the obtained La1.61GeO5-δ film was studied and it was found that the maximum output density of a SOFC single cell using a La1.61GeO5-δ thin film deposited on a porous NiO-SDC substrate reached to 1948.2 mW/cm2 at 1173 K and 424.4 mW/cm2 at 873 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 835: Symposium K – Solid-State Ionics , 2004 , K7.7
Copyright
Copyright © Materials Research Society 2005

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References

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